Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

Applied Physics Letters

Volumn 93, Issue 21, 2008, Pages

  Afanas'ev, V V ^a   Badylevich, M ^a   Stesmans, A ^a   Brammertz, G ^b   Delabie, A ^b   Sionke, S ^b   O'Mahony, A ^c   Povey, I M ^c   Pemble, M E ^c   O'Connor, E ^c   Hurley, P K ^c   Newcomb, S B ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d Glebe Scientific Ltd   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; ELECTRIC CONDUCTIVITY; HAFNIUM COMPOUNDS; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM;

ATOMIC LAYER DEPOSITED; ATOMIC LAYERS; BAND ALIGNMENTS; CONCOMITANT OXIDATIONS; INTER-LAYERS; INTERNAL PHOTOEMISSIONS; VALENCE BAND OFFSETS;

GALLIUM ALLOYS;

EID: 57049102907     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021374     Document Type: Article

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