SCOPUS 정보 검색 플랫폼

Volumn 106, Issue 7, 2009, Pages

Surface orientation dependence of interface properties of GeO2 /Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(4) Sasada, Takashi a Nakakita, Yosuke a Takenaka, Mitsuru a Takagi, Shinichi a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTANCE METHOD; FOWLER-NORDHEIM TUNNELING; GATE CURRENT; INTERFACE PROPERTY; INTERFACE TRAP DENSITY; INTERFACIAL STRUCTURES; LOW TEMPERATURES; METAL OXIDE SEMICONDUCTOR STRUCTURES; SURFACE ORIENTATION; THERMAL OXIDATION;

DIELECTRIC DEVICES; ELECTRON MOBILITY; ELECTRON TUBE DIODES; GERMANIUM; OXIDATION; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING GERMANIUM;

EID: 70350100491 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3234395 Document Type: Article

Times cited : (114)

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