Oxygen vacancy induced substantial threshold voltage shifts in the Hf-based high-K MISFET with p+poly-Si gates -A theoretical approach

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 11 A, 2004, Pages

  Shiraishi, Kenji ^a,b   Yamada, Keisaku ^b,c   Torii, Kazuyoshi ^d   Akasaka, Yasushi ^d   Nakajima, Kiyomi ^b   Konno, Mitsuru ^e   Chikyow, Toyohiro ^b   Kitajima, Hiroshi ^d   Arikado, Tsunetoshi ^d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c WASEDA UNIVERSITY   (Japan)

^d SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^e HITACHI LTD   (Japan)

Author keywords

Fermi level pinning, theory; Flatband shift; HfO2; High k dielectrics; Oxygen vacancy; Poly Si gate electrode; Threshold voltage shift

Indexed keywords

DIELECTRIC MATERIALS; ELECTRON TRANSITIONS; FERMI LEVEL; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXYGEN; POLYSILICON; THRESHOLD VOLTAGE;

FERMI LEVEL PINNING; FLATBAND SHIFT; OXYGEN VACANCY; POLY-SI-GATE ELECTRODES;

MISFET DEVICES;

EID: 11144319376     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L1413     Document Type: Article

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