Suppression of oxygen vacancy formation in Hf-based high- k dielectrics by lanthanum incorporation

Applied Physics Letters

Volumn 91, Issue 13, 2007, Pages

  Umezawa, N ^a   Shiraishi, K ^b   Sugino, S ^c   Tachibana, A ^c   Ohmori, K ^a,d   Kakushima, K ^e   Iwai, H ^e   Chikyow, T ^a   Ohno, T ^a   Nara, Y ^f   Yamada, K ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c KYOTO UNIVERSITY   (Japan)

^d WASEDA UNIVERSITY   (Japan)

^e TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^f SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; LANTHANUM COMPOUNDS; PERMITTIVITY; SUBSTITUTION REACTIONS;

FORMATION ENERGY; HIGH- K DIELECTRICS; LA-O BOND;

OXYGEN VACANCIES;

EID: 34848848075     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2789392     Document Type: Article

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