Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 178-179

  Narayanan, V ^a   Paruchuri, V K ^a   Bojarczuk, N A ^a   Linder, B P ^a   Doris, B ^a   Kim, Y H ^a   Zafar, S ^a   Statins, J ^a   Brown, S ^a   Arnold, J ^a   Copel, M ^a   Steen, M ^a   Cartier, E ^a   Callegari, A ^a   Jamison, P ^a   Locquet, J P ^b   Lacey, D L ^a   Wang, Y ^c   Batson, P E ^a   Ronsheim, P ^c   Jammy, R ^a   Chudzik, M P ^a   Ieong, M ^a   Guha, S ^a   Shahidi, G ^a   Chen, T C ^a   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH ZURICH   (Switzerland)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; POLYSILICON; THICKNESS MEASUREMENT; TITANIUM NITRIDE;

BAND EDGE CHARACTERISTICS; CAP LAYERS; DIELECTRIC STACKS;

MOSFET DEVICES;

EID: 36448954531     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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