Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al2O3/Ge structures

Applied Physics Letters

Volumn 102, Issue 8, 2013, Pages

  Zhang, Rui ^a,b   Huang, Po Chin ^a   Lin, Ju Chin ^a   Takenaka, Mitsuru ^a   Takagi, Shinichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GE(100) SURFACE; GE(111); LAYER-BY-LAYERS; OSCILLATING BEHAVIOR; OSCILLATION BEHAVIOR; POST-OXIDATION; POST-PLASMA; ULTRA-THIN;

OXIDATION; PHOTOELECTRONS; PLASMAS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 84874880196     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4794013     Document Type: Article

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