HfO2 gate dielectric with 0.5 nm equivalent oxide thickness

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1065-1067

  Harris, H ^a   Choi, K ^a   Mehta, N ^a   Chandolu, A ^a   Biswas, N ^a   Kipshidze, G ^a   Nikishin, S ^a   Gangopadhyay, S ^a   Temkin, H ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE CURVE; DIELECTRIC DEPOSITION; EQUIVALENT OXIDE THICKNESS; FLAT BAND; FREQUENCY DISPERSION; HAFNIUM DIOXIDE FILM; HYDROGEN ANNEALING; INSULATOR-SEMICONDUCTOR STRUCTURES; LARGE HYSTERESIS; LOW TEMPERATURES; POST DEPOSITION ANNEALING; REACTIVE ELECTRON BEAM EVAPORATION; ROOM TEMPERATURE; SI(100) SURFACE; SILICON SURFACES;

DISPERSIONS; ELECTRON BEAMS; GATE DIELECTRICS; HAFNIUM; HYDROGEN; HYSTERESIS;

HAFNIUM OXIDES;

EID: 79956041216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495882     Document Type: Article

References (25)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000). jap JAPIAU 0021-8979
2. B. H. Lee, L. Kang, and R. Nieh, W. Qi, and J. C. Lee, Appl. Phys. Lett. 76, 1926 (2000). apl APPLAB 0003-6951
3. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 76, 112 (2000). apl APPLAB 0003-6951
4. J. Shappir, A. Anis, and I. Pinsky, IEEE Trans. Electron Devices ED-33, 442 (1986). etd IETDAI 0018-9383
5. A. Bastianini, G. A. Bastiton, R. Gerbasi, M. Porshia, and S. Daolio, J. Phys. II 5, C5-525 (1995). jpj JPAHER 1155-4312
6. M. Houssa, M. Tuominen, M. Naili, V. Afanas'ev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000). jap JAPIAU 0021-8979
7. P. Baumeister and O. Arnon, Appl. Opt. 16, 439 (1977). apo APOPAI 0003-6935
8. J. P. Lehan, Y. Mao, B. G. Bovard, and H. A. Macleod, Thin Solid Films 203, 227 (1991). tsf THSFAP 0040-6090
9. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133, 666 (1986). jes JESOAN 0013-4651
10. B. Garrido, J. Montserrat, and J. R. Morante, J. Electrochem. Soc. 143, 4059 (1996). jes JESOAN 0013-4651
11. E. Yablanovich, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Phys. Rev. Lett. 57, 249 (1986). prl PRLTAO 0031-9007
12. M. C. Hersam, N. P. Guisinger, J. W. Lyding, D. S. Thompson, and J. S. Moore, Appl. Phys. Lett. 78, 886 (2001). apl APPLAB 0003-6951
13. J. Dabrowski and H. Mussig, Silicon Surfaces and Formation of Interfaces (World Scientific, Singapore, 2000).
14. V. G. Antipov, S. A. Nikishin, and D. V. Sinyavskii, Tech. Phys. Lett. 17, 45 (1991). stl STPLD2 0360-120X
15. Deiter K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998).
16. B. E. Deal, J. Electrochem. Soc. 121, 198C (1974). jes JESOAN 0013-4651
17. B. H. Lee, L. Kang, K. Onishi, Y. Jeon, R. Nieh, W. Qi, and J. Lee, Sematech Conference on Gate Stack Engineering, Austin, Texas 2000.
18. Y. Nissan-Cohen and T. Gorczyca, IEEE Electron Device Lett. 9, 287 (1988). edl EDLEDZ 0741-3106
19. M. Houssa, V. Afanas'ev, A. Stesmans, and M. Heyns, Appl. Phys. Lett. 77, 1885 (2000). apl APPLAB 0003-6951
20. T. W. Hickmott, J. Appl. Phys. 51, 4269 (1980). jap JAPIAU 0021-8979
21. J. R. Brews, J. Appl. Phys. 45, 1276 (1974). jap JAPIAU 0021-8979
22. L. M. Terman, Solid-State Electron. 5, 285 (1962). sel SSELA5 0038-1101
23. N. Biswas, H. Harris, K. Choi, A. Chandolu, S. Nikishin, H. Temkin, and S. Gangopadhyay, J. Appl. Phys. (submitted for publication).
24. F. Stern, Phys. Rev. B 5, 4891 (1972). prq PLRBAQ 0556-2805
25. T. Ghani, K. Mistry, P. Packan, S. Thompson, M. Stettler, S. Tyagi, and M. Bohr, Tech. Dig. VLSI Symp., 174 (2000).