High dielectric constant gate oxides for metal oxide Si transistors

Reports on Progress in Physics

Volumn 69, Issue 2, 2006, Pages 327-396

  Robertson, John ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 31044455312     PISSN: 00344885     EISSN: None     Source Type: Journal    
DOI: 10.1088/0034-4885/69/2/R02     Document Type: Article

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