High dielectric constant oxides

EPJ Applied Physics

Volumn 28, Issue 3, 2004, Pages 265-291

  Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; DEPOSITION; DIFFUSION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; GATES (TRANSISTOR); LEAKAGE CURRENTS; METALLURGY; OXIDES; PERMITTIVITY; SURFACE STRUCTURE; THIN FILMS;

ATOMIC DIFFUSION; DIELECTRIC THIN FILMS; ELECTRONIC DEFECTS; GATE OXIDES; INTEGRATED CIRCUIT FABRICATION TECHNOLOGY;

DIELECTRIC FILMS;

EID: 10844282779     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004206     Document Type: Review

References (159)

1. G. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001)
2. R.M. Wallace, G.D. Wilk, Crit. Rev. Solid State 28, 231 (2003)
3. R.M. Wallace, G. Wilk, MRS Bull. 27 (2002)
4. S.H. Lo, D.A. Buchanan, Y. Taur, W. Wang, IEEE Electr. Device L. 18, 209 (1997)
5. R. Chau, at International Workshop on Gate Insulator, Tokyo, 2003, http://www.intel.com/research/silicon/micron. htm#high; R. Chau, IEEE ED Lett. 25, 408 (2004)
6. R. Chau, at International Workshop on Gate Insulator, Tokyo, 2003, http://www.Intel.com/research/silicon/ micron, htmttiigh; R. Chau, IEEE ED Lett. 25, 408 (2004)
7. R.W. Murto, M.I. Gardner, G.A. Brown, P.M. Zeitzoff, H.R. Huff, Solid State Technol. 46, 43 (2003)
8. A.I. Kingon, A.I. Kingon, J.P. Maria, S.K. Streiffer, Nature 406, 1032 (2000)
9. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000)
10. J.D. Plummer, P.B. Griffin, Proc. IEEE 89, 240 (2001)
11. H.J. Hubbard, D.G. Schlom, J. Mater. Res. 11, 2757 (1996)
12. D.G. Schlom, J.H. Haeni, MRS Bull. 27, 198 (2002)
13. M. Copel, M. Gribelyuk, E. Gusev, Appl. Phys. Lett. 76, 436 (2000)
14. M. Gutowski, J.E. Jaffe, C.L. Liu, M. Stoker, R.I. Hegde, R.S. Rai, P.J. Tobin, Appl. Phys. Lett. 80, 1897 (2002)
15. Y.H. Wu, M.Y. Yang, A. Chin, W.J. Chen, C.M. Kwei, IEEE Electr. Device L. 21, 341 (2000)
16. H. Iwai et al., Tech. Digest. Int. Electron Devices Meeting (IEEE, 2002)
17. J. Kwo et al., Appl. Phys. Lett. 77, 130 (2000)
18. A. Fissel, H.J. Osten, E. Bugiel, J. Vac. Sci. Technol. B 21, 1765 (2003)
19. S. Ohmi, M. Takeda, H. Ishiwara, H. Iwai, J. Electrochem. Soc. 151, G279 (2004)
20. G.D. Wilk, R. Wallace, J.M. Anthony, J. Appl. Phys. 87, 484 (2000)
21. M.R. Visokay, J.J. Chambers. A.L.P. Rotondaro, A. Shanware. L. Colombo, Appl. Phys. Lett. 80, 3183 (2002)
22. B.H. Lee, L. Kang, R. Nieh. J.C. Lee, Appl. Phys. Lett. 76, 1926 (2000)
23. J. Robertson, C.W. Chen, Appl. Phys. Lett. 74, 1168 (1999)
24. E.P. Gusev, D.A. Buchanan, E. Cartier, A. Kumar, S. Guha, A. Callegari. S. Zafar. P.C. Jamison. D.A. Neumayer, M. Copel, M.A. Gribelyuk, H. Okorn-Schrnidt, C. D'Ernic, P. Kozlowski, K. Chan, N. Bojarczuk, L.A. Ragnarsson, P. Ronsheim. K. Rim. R.J. Fleming, A. Mocuta, A. Ajrnera, in Tech. Digest. Int. Electron Devices Meeting 2001. p. 455
25. E.P. Gusev, E. Cartier, D.A. Buchanan. M. Gribelyuk, M. Copel, Microelectron. Eng. 59, 341 (2001)
26. S. Guha, E. Cartier, N.A. Bojarczuk, J. Bruley, L. Gignac. J. Karasinski, Appl. Phys. Lett. 90, 512 (2001)
27. W. Tsai et al. (IMEC) Tech. Digest. Int. Electron Devices Meeting 2003, paper 13.2
28. Y.C. Yeo, T.J. King, C. Hu, Appl. Phys. Lett. 81, 2091 (2002)
29. M. Ritala. in High K gate dielectrics, edited by M. Houssa (Inst. Physics, Bristol, UK, 2004)
30. M. Ritala, K. Kukli, A. Rahtu, P.I. Raisaricn, M. Lcskcla, Science 288, 319 (2000)
31. A.C. Jones, P.R. Chalker, J. Phys. D 36, R80 (2003)
32. M.L. Green, M.Y. Ho, B. Busch, G.D. Wilk, T. Sorsch, T. Conard, B. Brijs, W. Vandervorst, P.I. Raisanen, D.A. Muller, M. Bude, J. Grazul. J. Appl. Phys. 92, 7168 (2002)
33. L.A. Ragnarrson, L. Pantisano, V. Kaushik, S.I. Saito, Y. Shimamoto, S. DeGendt, M. Heyns, Tech. Digest. Int. Electron Devices Meeting 2003, paper 4.2
34. M.M. Frank, Y.J. Chabal, M.L. Green, A. Delabie, B. Brijs, G.D. Wilk, M.Y. Ho, U.R. Baurnvol, Appl. Phys. Lett. 83. 740 (2003)
35. M.M. Frank, Y.J. Chabal, G.D. Wilk, Appl. Phys. Lett. 82, 4758 (2003)
36. G.B. Rayner, D. Kang, G. Lucovsky, J. Vac. Sci. Technol. B 21, 1783 (2003)
37. J.P. Maria, D. Wicaksana, A.I. Kirigon, B. Busch, H. Schulte, E. Garfunkel, T. Gustafsson, J. Appl. Phys. 90. 3476 (2001)
38. H. Kim, P.C. McIntyre, J. Appl. Phys. 92, 5094 (2002)
39. S. Stemmer, Z. Chen, G.G. Levi, P.S. Lysaght, B. Foran, J.A. Gisby, J.R. Taylor, Jpn J. Appl. Phys. 42, 3593 (2003)
40. S. Stemmer, Y. Li, B. Foran, P.S. Lysaght, S.K. Streiffer, P. Fuoss, S. Seifert, Appl. Phys. Lett. 83, 3141 (2003)
41. C. Zhao, O. Richard, E. Young, H. Bender, G. Roebbeii, S. Haukka, S. DeGendt, M. Houssa, R. Carter, W. Tsai, O. Van der Biest. M. Heyns, J. Non-Cryst. Solids 303. 144 (2002)
42. M.Y. Ho, H. Gong, G.D. Wilk, B.W. Busch, M.L. Green, Appl. Phys. Lett. 81, 4218 (2002)
43. J.C. Lee et al., Tech. Digest. Int. Electron Devices Meeting 2003, paper 4.4
44. J. Morals et al., Appl. Phys. Lett. 81, 2995 (2002); 79, 4192 (2001)
45. J. Morals et al., Appl. Phys. Lett. 81, 2995 (2002); 79, 4192 (2001)
46. M.A. Quevedo-Lopez et al., Appl. Phys. Lett. 81, 1074 (2002); 82, 4669 (2003)
47. M.A. Quevedo-Lopez et al., Appl. Phys. Lett. 81, 1074 (2002); 82, 4669 (2003)
48. R.M.C. de Almeida, U.R. Baumvol, Surf. Sci. Rep. 49, 1 (2003)
49. B.W. Busch, O. Pluchery, Y.J. Chabal. D.A. Muller, R. Opila, D.A. Muller, J.R. Kwo. E. Garfunkel. Mater. Res. Soc. Bull. 206 (2002)
50. S. Ferrari, G. Scarel. J. Appl. Phys. 96, 144 (2004)
51. M.L. Green, E.P. Gusev, R. Degraeve, E.L. Garfunkcl, J. Appl. Phys. 90, 2057 (2001)
52. S. Stemmer. J. Vac. Sci. Technol. B 22, 791 (2004)
53. J. Perriere, J. Siejka. R.P.H. Chang, J. Appl. Phys. 56, 2716 (1984)
54. V. Naraynan. S. Guha, M. Copel, N.A. Bojarczuk, P.L. Flaitz, M. Bribelyuk. Appl. Phys. Lett. 81. 4183 (2002)
55. M. Copel, M.C. Reuter, Appl. Phys. Lett. 83, 3398 (2003)
56. M.A. Grihclyuk et al., J. Appl. Phys. 92, 1232 (2002)
57. M. Copel, M.C. Router, P. Jamisori, Appl. Phys. Lett. 85, 458 (2004)
58. G.D. Wilk, D.A. Muller. Appl. Phys. Lett. 83. 3984 (2003)
59. H.S. Baik, M. Kim, G.S. Park, S.A. Song. M. Varela. A. Franceschetti, S.T. Pantclides. S.J. Pcimycock. Appl. Phys. Lett. 85, 672 (2004)
60. M. Copel. Appl. Phys. Lett. 82, 1580 (2003)
61. H. Watanabe, M. Saitoh, N. Ikarashi, T. Tatsumi, Appl. Phys. Lett. 85, 449 (2004)
62. M. Copel, E. Cartier. V. Narayanan, M.C. Reuter. S. Guha, N. Bojarczuk, Appl. Phys. Lett. 81. 4227 (2002)
63. R.H. French, S.J. Glass, F.S. Ohuchi. Y.N. Xu, W.Y. Ching, Phys. Rev. B 49, 5133 (1994)
64. B. Kralik. E.K. Chang, S.G. Louie, Phys. Rev. B 57, 7027 (1998)
65. K. Xiong, J. Robertson (unpublished), WDA bands
66. P.W. Peacock, J. Robertson. J. Appl. Phys. 92, 4712 (2002)
67. G. Lucovsky, Y. Zhang, J.L. Whitten, D.G. Schloin, J.L. Freeouf, Microelectron. Eng. 72, 288 (2004)
68. G.M. Rignanese, X. Gonze, A. Pasquarello, Phys. Rev. B 63, 104305 (2001)
69. H. Kato, T. Nango, T. Miyagawa, T. Katagiri, K.S. Seol, Y. Ohki, J. Appl. Phys. 92, 1106 (2002)
70. S.G. Lim, S. Kriventsov, T.N. Jackson, J.H. Haeni, D.G. Schlom, A.M. Balbashov, R. Uccker, P. Reiche, J.L. Freeouf, G. Lucovsky, J. Appl. Phys. 91, 4500 (2002)
71. X. Zhao, D. Vanderbilt, Phys. Rev. B 65. 233106 (2002)
72. G.M. Rignanese. X. Gionze. G. Jun, K.J. Cho, A. Pasquarello, Phys. Rev. B 69, 184301 (2004)
73. A. Baldereschi. A. Baroni, R. Resta. Phys. Rev. Lett. 61. 734 (1988)
74. C.G. van de Walle, Phys. Rev. B 39, 1871 (1989)
75. R.T. Tung, Phys. Rev. Lett. 84, 6078 (2000): R.T. Tung, Phys. Rev. B 64, 205310 (2001)
76. R.T. Tung, Phys. Rev. Lett. 84, 6078 (2000): R.T. Tung, Phys. Rev. B 64, 205310 (2001)
77. W. Mönch, Phys. Rev. Lett. 58, 1260 (1987)
78. W. Mönch, Surf. Sci. 300, 928 (1994)
79. C. Tejedor, F. Flores, E. Louis, J. Phys. C 10, 2163 (1977)
80. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984)
81. A.W. Cowley, S.M. Sze, J. Appl. Phys. 36. 3212 (1965)
82. S.A. Chambers, Y. Liang, Z. Yu, R. Dropad, J. Ramdani, K. Eisenbeiser, Appl. Phys. Lett. 77, 1662 (2000)
83. S. Miyazaki, J. Vac. Sci. Technol. B 19, 2212 (2001)
84. D.J. Maria, J. Appl. Phys. 45, 5454 (1974)
85. R. Ludeke, M.T. Cuberes, E. Cartier, Appl. Phys. Lett. 76, 2886 (2000)
86. V.V. Afanasev, M. Houssa, A. Stesmans, M.M. Heyns, Appl. Phys. Lett. 78, 3073 (2001)
87. V.V. Afanasev, M. Houssa, A. Stesmans, M.M. Heyns, J. Appl. Phys. 91, 3079 (2002) (and private communication)
88. S. Sayan, E. Garfunkel, S. Suzer, Appl. Phys. Lett. 80, 2135 (2002)
89. G.B. Rayner, D. Kang, Y. Zhang, G. Lucovsky, J. Vac. Sci. Technol. B 20, 1748 (2002)
90. M. Oshima et al., Appl. Phys. Lett. 83, 2172 (2003)
91. L.F. Edge, D.G. Schlom, S.A. Chambers, E. Cicerrella, J.L. Freeouf, B. Hollander, J. Schubert, Appl. Phys. Lett. 84, 726 (2004)
92. T. Hattori, T. Yosihda, T. Shiraishi, K. Takahashi, H. Nohira, S. Joumori, K. Nakajima, M. Suzuki, K. Kimura, I. Kashiwagi, C. Ohshima, S. Ohmi, H. Iwai, Microelectron. Eng. 72, 283 (2004)
93. A. Ohta, M. Yamaoka, S. Miyazaki, Microelectron. Eng. 72, 154 (2004)
94. P.W. Peacock, J. Robertson, Phys. Rev. Lett. 92, 057601 (2004)
95. J. Robertson, Microelectron. Eng. 72, 112 (2004)
96. J. Robertson, P.W. Peacock, Phys. Stat. Sol. B 241, 2236 (2004)
97. C.J. Forst, C. Ashman, K. Schwarz, P.E. Blochl, Nature 427, 56 (2004)
98. X. Zhang, A.A. Demkov, H. Li, X. Hu, H. We, J. Kulik, Phys. Rev. B 68, 125323 (2003)
99. P.W. Peacock, J. Robertson, Appl. Phys. Lett. 83, 5497 (2003)
100. S.J. Wang, C.K. Ong, S.Y. Xu, P. Chen, W.C. Tjiu, J.W. Chai, A.C.H. Huan, W.J. Yoo, J.S. Lim, W. Feng, W.K. Choi, Appl. Phys. Lett. 78, 1604 (2001)
101. S.J. Wang, C.K. Ong, Appl. Phys. Lett. 80, 2541 (2002)
102. S. Guha, N.A. Bojarczuk, V. Narayanan, Appl. Phys. Lett. 80, 766 (2002)
103. V. Narayanan, S. Guha, N.A. Bojarczuk, F.M. Ross, J. Appl. Phys. 93, 251 (2003)
104. G. Apostolopoulos et al., Appl. Phys. Lett. 81, 3549 (2002)
105. D. Cherns, G.R. Anstis, J.L. Hutchison, J.C.H. Spence, Philos. Mag. A 46, 849 (1982)
106. D.R. Hamann, Phys. Rev. Lett. 60, 313 (1988)
107. S. Satpathy, R.M. Martin, Phys. Rev. B 39, 8494 (1989)
108. R.M. Tromp, M.C. Reuter, Phys. Rev. Lett. 61, 1756 (1988)
109. R. Puthenkovilakam, E.A. Carter, J.P. Chang, Phys. Rev. B 69, 155329 (2004)
110. L.R.C. Fonseca, A.A. Demkov, A. Knizhnik, Phys. Stat. Sol. B 239, 48 (2003)
111. Y. Tu, J. Tersoff, Phys. Rev. Lett. 84, 4393 (2000)
112. V. Fiorentini, G. Gulleri, Phys. Rev. Lett. 89, 266101 (2002)
113. J.L. Alay, M. Hirose, J. Appl. Phys. 81, 1606 (1997); J.W. Keister et al., J. Vac. Sci. Technol. B 17, 1831 (1999)
114. J.L. Alay, M. Hirose, J. Appl. Phys. 81, 1606 (1997); J.W. Keister et al., J. Vac. Sci. Technol. B 17, 1831 (1999)
115. G. Lucovsky, J. Vac. Sci. Technol. A 19, 1553 (2001)
116. A.S. Foster, V.B. Sulimov, F.L. Gejo, A.L. Shluger, R.N. Nieminen, Phys. Rev. B 64, 224108 (2001)
117. A.S. Foster, F.L. Gejo, A.L. Shluger, R.N. Nieminen, Phys. Rev. B 65, 174117 (2002)
118. K. Xiong, P.W. Peacock, J. Robertson, Mater. Res. Soc. Symp. Proc., Vol. 811, paper D6.4 (2004); IEEE T. Reliab. (2005)
119. K. Xiong, P.W. Peacock, J. Robertson, Mater. Res. Soc. Symp. Proc., Vol. 811, paper D6.4 (2004); IEEE T. Reliab. (2005)
120. B.M. Klein, W.E. Pickett, L.L. Boyer, R. Zeller, Phys. Rev. B 35, 5802 (1987)
121. B.M. Bylander, L. Kleinman, Phys. Rev. B 41, 7868 (1990)
122. P.P. Rushton, D.J. Tozer, S.J. Clark, Phys. Rev. B 65, 235203 (2002)
123. H. Takeuchi, D. Ha, T.J. King, J. Vac. Sci. Technol. A 22, 1337 (2004)
124. A.Y. Kang, P.M. Lenahan, J.F. Conley, Appl. Phys. Lett. 83, 3407 (2003); (and unpublished)
125. S.C. Sun, J.D. Plummer, IEEE T. Electron Dev. 27, 1497 (1980)
126. S.I. Takagi, A. Toriumi, M. Iwase, H. Tango, IEEE T. Electron Dev. 41, 2357 (1994)
127. L.A. Ragnarsson, S. Guha, M. Copel, E. Cartier, N.A. Bojarczuk, J. Karasinski, Appl. Phys. Lett. 78, 4169 (2001)
128. S. Guha, E.P. Gusev, H. Okorn-Schmidt, L.A. Ragnarsson, N.A. Bojarczuk, Appl. Phys. Lett. 81, 2956 (2002)
129. M. Hiratani, S. Saito, Y. Shimamoto, K. Torii, Jpn J. Appl. Phys. 41, 4521 (2002)
130. L.A. Ragnarsson, L. Pantisano, V. Kaushik, S.I. Saito, Y. Shimamoto, S. DeGent, M. Heyns, Tech. Digest. Int. Electron Devices Meeting 2003, p. 87
131. K. Onishi, S.A. Krishnan, J.C. Lee, IEEE T. Electron Dev. 50, 384 (2003)
132. M.V. Fischetti, D.A. Neumayer, E.A. Cartier, J. Appl. Phys. 90, 4587 (2001)
133. W. Zhu, J.P. Han, T.P. Ma, IEEE T. Electron Dev. 51, 98 (2004)
134. L.A. Ragnarrson, N.A. Bojarczuk, J. Karaninski, S. Guha, IEEE Electr. Device L. 24, 689 (2003)
135. Z. Ren, M.V. Fischetti, E.P. Gusev, E.A. Cartier, M. Chudzik, Tech. Digest. Int. Electron Devices Meeting 2003, paper 33.2
136. S. Datta et al, Tech. Digest. Int. Electron Devices Meeting 2003, paper 28.8
137. S. Saito, D. Hisamoto, S. Kimura, M. Hiratani, Tech. Digest. Int. Electron Devices Meeting 2003, paper 33.3
138. C. Hobbs et al., VLSI Symp. (2003), p. 9
139. S.B, Samavedam, L.B. La, P.J. Tobin, B. White, C. Hobbs, L.C.R. Fonseca, A.A. Demkov, J. Schaeffer, E. Lukowski, A. Martinez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. Garcia, S.G.H. Anderson, K. Moore, H.H. Tseng, C. Capasso, D.C. Gilnmer, W.J. Taylor, R. Hegde, J. Grant, Tech. Digest. Int. Electron Devices Meeting 2003, paper 13.1
140. C. Hobbs et al., IEEE T. Electron Dev. 51, 971 (2004)
141. C Hobbs et al., IEEE T. Electron Dev. 51, 978 (2004)
142. C.W. Yang et al., Appl. Phys. Lett. 83, 308 (2003)
143. E. Cartier et al., VLSI (2004), paper 5.4
144. S. Sayan, E. Garfunkel, J. Robertson, Proc. Electrochem. Soc. 2004-01, 255 (2004)
145. Y.C. Yeo, T.J. King, C. Hu, J. Appl. Phys. 92, 7266 (2002)
146. J.K. Schaeffer, S. Samavedam, L. Fonseca, C. Capasso, O. Adetutu, D. Gilmer, C. Hobbs, E. Lckowski, R. Gregory, Z.X. Jiang, Y. Liang, K. Moore, D. Roan, B.Y. Nguyen, P. Tobin, B. White, Mater. Res. Soc. Symp. Proc. (Spring 2004)
147. K. Xiong, P.W. Peacock, J. Robertson, Appl. Phys. Lett., to be published (2005)
148. V. Afanasev, A. Stesmans, Appl. Phys. Lett. 80, 1261 (2002)
149. S. Zafar, A. Callegari, E. Gusev, M.V. Fischetti, J. Appl. Phys. 93, 9298 (2003)
150. A. Kumar, M.V. Fischetti, T.H. Ning, E. Gusev, J. Appl. Phys. 94, 1728 (2003)
151. G. Bersuker, P. Zeitzoff, G. Brown, H.R. Huff, Mats Today 7 (Jan 2004), p. 26
152. A. Kerber, E. Cartier, IEEE Lett. 24, 87 (2003)
153. A. Shanware et al., Tech. Digest. Int. Electron Devices Meeting 2003, paper 38-6
154. A. Stesmans, V.V. Afanasev, Appl. Phys. Lett. 82, 4074 (2003)
155. J. Matta et al., Phys. Chem. Chem. Phys. 1, 4975 (1999)
156. M. Houssa, V.V. Afanasev, A. Stesmans, M.M. Heyns, Appl. Phys. Lett. 77, 1885 (2000)
157. R.A. McKee, F.J. Walker, M.F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998)
158. R.A. McKee, F.J. Walker, M.F. Chisholm, Science 293, 468 (2001)
159. L.F. Edge, D.G, Schlom, R.T. Brewer, Y.J. Chabal, J.R. Williams, S.A. Chambers, Y. Yang, S. Stemmer, M. Copel, B. Hollander, J. Schubert, Appl. Phys. Lett. 84, 4629 (2004)