Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films

Applied Physics Letters

Volumn 82, Issue 26, 2003, Pages 4669-4671

  Quevedo Lopez, M A ^a,b   El Bouanani, M ^a   Kim, M J ^a   Gnade, B E ^a   Wallace, R M ^a   Visokay, M R ^b   LiFatou, A ^b   Chambers, J J ^b   Colombo, L ^b  

^a Center for Advanced Research and Technology   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTALLIZATION; DIFFUSION; GRAIN BOUNDARIES; HIGH RESOLUTION ELECTRON MICROSCOPY; NITROGEN; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICATES; TRANSMISSION ELECTRON MICROSCOPY;

SILICATE FILMS;

DIELECTRIC FILMS;

EID: 0037767886     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1586483     Document Type: Article

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