Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2

Applied Physics Letters

Volumn 82, Issue 23, 2003, Pages 4074-4076

  Stesmans, A ^a   Afanas'ev, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRIC INSULATORS; HAFNIUM COMPOUNDS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARAMAGNETIC RESONANCE; PASSIVATION; PERMITTIVITY; SILICA;

PRECURSORS;

SURFACE CHEMISTRY;

EID: 0037828884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1579564     Document Type: Article

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