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Applied Physics Letters

Volumn 89, Issue 2, 2006, Pages

Defect states in the high-dielectric-constant gate oxide LaAlO3

(3) Xiong, K a,c Robertson, J a Clark, S J b

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b DURHAM UNIVERSITY (United Kingdom)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRAPS; ENERGY GAP; GATES (TRANSISTOR); PERMITTIVITY; PROBABILITY DENSITY FUNCTION;

BAND GAP CORRECTION; BAND OFFSETS; CONDUCTION BAND; OXYGEN VACANCY;

LANTHANUM COMPOUNDS;

EID: 33746062052 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2221521 Document Type: Article

Times cited : (136)

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