La-based ternary rare-earth oxides as alternative high-κ dielectrics

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1890-1893

  Lopes, J M J ^a   Roeckerath, M ^a   Heeg, T ^a   Littmark, U ^a   Schubert, J ^a   Mantl, S ^a   Jia, Y ^b   Schlom, D G ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Alternative gate dielectrics; higher ; LaLuO3; LaScO3; Rare earth oxides

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SILICON; STOICHIOMETRY;

ALTERNATIVE GATE DIELECTRICS; RARE-EARTH OXIDES;

RARE EARTH COMPOUNDS;

EID: 34248634613     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.123     Document Type: Article

References (10)

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