Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOy

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 986-991

  Wang, X P ^a   Li, M F ^a,b   Chin, Albert ^a   Zhu, C X ^a   Shao, Jun ^c   Lu, W ^c   Shen, X C ^c   Yu, X F ^a   Chi, Ren ^a   Shen, C ^a   Huan, A C H ^d   Pan, J S ^d   Du, A Y ^b   Lo, Patrick ^b   Chan, D S H ^a   Kwong, Dim Lee ^a,e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^e The University of Texas at Austin   (United States)

Author keywords

Hf(1 x)LaxOy; High gate dielectric; Metal gate; MOSFET; Workfunction tuning

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GATE DIELECTRIC; INTERNATIONAL TECHNOLOGY ROADMAP; METAL GATE; WORKFUNCTION TUNING;

DIELECTRIC MATERIALS;

EID: 33745745755     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.05.008     Document Type: Article

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