Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 9298-9303

  Zafar, Sufi ^a   Callegari, Alessandro ^a   Gusev, Evgeni ^a   Fischetti, Massimo V ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHARGE CARRIERS; LEAKAGE CURRENTS; PERMITTIVITY; SILICA; THRESHOLD VOLTAGE;

CHARGE TRAPPING;

FIELD EFFECT TRANSISTORS;

EID: 0038650830     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1570933     Document Type: Article

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