First principles investigation of defects at interfaces between silicon and amorphous high-κ oxides

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2022-2027

  Broqvist, Peter ^a   Pasquarello, Alfredo ^a  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

DFT; HfO2; Oxide defects

Indexed keywords

COMPUTER SIMULATION; CRYSTAL STRUCTURE; ENERGY GAP; PROBABILITY DENSITY FUNCTION; SILICON;

BAND EDGES; HFO2; OXIDE DEFECTS;

DEFECTS;

EID: 34248995628     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.075     Document Type: Article

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