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Journal of Applied Physics

Volumn 89, Issue 10, 2001, Pages 5243-5275

High-κ gate dielectrics: Current status and materials properties considerations

(3) Wilk, G D a Wallace, R M b Anthony, J M c

a AGERE SYSTEMS (United States)

b Center for Advanced Research and Technology (United States)

c UNIVERSITY OF SOUTH FLORIDA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035872897 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1361065 Document Type: Article

Times cited : (5892)

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