Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Choi, Eun Ae ^a   Chang, K J ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM; HAFNIUM COMPOUNDS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; STABILITY;

CHARGE TRAPPING/DETRAPPING; FERMI-LEVEL PINNING; FLAT-BAND VOLTAGE SHIFTS; GATE BIAS; GATE ELECTRODES; GATE STACKS; NEGATIVE-U; QUASI-PARTICLE ENERGY CALCULATIONS; TIME-SCALE; TRANSITION LEVELS;

OXYGEN VACANCIES;

EID: 63749093037     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3106643     Document Type: Article

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