Inelastic electron tunneling spectroscopy study of traps in ultrathin high-k gate dielectrics

Applied Physics Letters

Volumn 83, Issue 26, 2003, Pages 5461-5463

  He, Wei ^a   Ma, T P ^a  

^a Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; INELASTIC ELECTRON TUNNELING SPECTROSCOPY (IETS); JET VAPOR DEPOSITION (JVD);

CAPACITORS; CARRIER CONCENTRATION; CRYOGENICS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CHARGE; ENERGY DISSIPATION; FERMI LEVEL; LATTICE VIBRATIONS; LEAKAGE CURRENTS; MOS CAPACITORS; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS; STRESS ANALYSIS; THRESHOLD VOLTAGE;

ELECTRON TRAPS;

EID: 0942266947     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1636519     Document Type: Article

References (8)

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