Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom

IEEE Electron Device Letters

Volumn 21, Issue 7, 2000, Pages 341-343

  Wu, Y H ^a   Yang, M Y ^a   Chin, Albert ^a   Chen, W J ^b   Kwei, C M ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT DENSITY; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; INTERFACES (MATERIALS); LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; RELIABILITY; SILICA; THICKNESS MEASUREMENT;

DIELECTRIC INTEGRITY; GATE DIELECTRIC; INTERFACE TRAP DENSITY; LANTHANUM OXIDE; OXIDE THICKNESS;

DIELECTRIC MATERIALS;

EID: 0034217328     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.847374     Document Type: Article

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