Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high- K application

Applied Physics Letters

Volumn 90, Issue 11, 2007, Pages

  Laha, Apurba ^a   Osten, H J ^a   Fissel, A ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; INTERFACES (MATERIALS); MOS DEVICES; PERMITTIVITY; SILICON; THIN FILMS;

BAND ALIGNMENT; INTERFACE LAYER COMPOSITION; INTERFACE STATES;

GADOLINIUM COMPOUNDS;

EID: 33947326574     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713142     Document Type: Article

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