Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al 2 O3: In situ surface characterization

Applied Physics Letters

Volumn 95, Issue 3, 2009, Pages

  Swaminathan, Shankar ^a   Oshima, Yasuhiro ^a,b   Kelly, Michael A ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b Tokyo Electron US Holdings Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING STATE; CAPACITANCE VOLTAGE MEASUREMENTS; DYNAMIC EVOLUTION; FLAT-BAND VOLTAGE; GE(100); IN-SITU; INTERFACE STATE; INTERFACIAL REGION; METAL OXIDE SEMICONDUCTOR; MID-GAP INTERFACES; SURFACE CHARACTERIZATION; SURFACE LAYERS;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; ELECTRIC POTENTIAL; GERMANIUM; OXIDANTS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67651240703     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3177195     Document Type: Article

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