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Volumn 96, Issue 13, 2010, Pages

Physical origins of mobility degradation in extremely scaled SiO 2 / HfO2 gate stacks with la and Al induced dipoles

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS; GATE STACKS; INDUCED DIPOLES; INTERFACIAL LAYER; METAL-GATE; MOBILITY DEGRADATION; SCALING EFFECTS;

DEGRADATION; DIELECTRIC MATERIALS; ELECTRON MOBILITY; HAFNIUM COMPOUNDS; SILICON COMPOUNDS;

ALUMINUM;

EID: 77950491947 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3373914 Document Type: Article

Times cited : (68)

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