High-electron-mobility Ge/GeO2 n-MOSFETs with two-step oxidation

IEEE Transactions on Electron Devices

Volumn 58, Issue 5, 2011, Pages 1295-1301

  Lee, Choong Hyun ^a,b   Nishimura, Tomonori ^a,b   Nagashio, Kosuke ^a,b   Kita, Koji ^a,b   Toriumi, Akira ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Germanium; high pressure oxidation (HPO); metaloxidesemiconductor field effect transistors (MOSFETs); mobility; surface orientation effects

Indexed keywords

CAPACITANCE-VOLTAGE CHARACTERISTICS; CHANNEL INTERFACE; CONDUCTANCE METHOD; ELECTRICAL PROPERTY; HIGH ELECTRON MOBILITY; HIGH-PRESSURE OXIDATION (HPO); INTERFACE STATES DENSITY; KINETIC CONTROL; LOW TEMPERATURES; METALOXIDESEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS); MOBILITY; MOSFETS; N-CHANNEL; NMOSFETS; OXYGEN ANNEALING; PRESSURE OXIDATION; SCATTERING SOURCE; SURFACE ORIENTATION EFFECTS;

ELECTRIC PROPERTIES; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GERMANIUM; HIGH PRESSURE EFFECTS; MOSFET DEVICES; OXIDATION; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955539932     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2111373     Document Type: Article

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