Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2723-2725

  Stesmans, A ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0542363921     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115577     Document Type: Review

References (13)

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5. See, e.g., E. Kooi, Philips Res. Rep. 21, 477 (1966).
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7. K. L. Brower, Phys. Rev. B 42, 3444 (1990); K. L. Brower and S. M. Myers, Appl. Phys. Lett. 57, 162 (1990).
8. ox ranges.
9. A. Stesmans and G. Van Gorp, Phys. Rev. B 42, 3765 (1990); 45, 4344 (1992).
10. A. Stesmans, Solid State Commun. INS 97, 255 (1996).
11. f.
12. R. A. Kohler, R. A. Kushner, and K. H. Lee, IEEE Trans. Nucl. Sci. NS-35, 1492 (1988); R. E. Stahlbush, A. H. Edwards, D. L. Griscom, and B. J. Mrstik, J. Appl. Phys. 73, 658 (1993).
13. J. E. Shelby, J. Chem. Phys. AIP 48, 3387 (1977).