Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

Applied Physics Letters

Volumn 94, Issue 18, 2009, Pages

  Oshima, Yasuhiro ^a,b   Shandalov, Michael ^a   Sun, Yun ^c   Pianetta, Piero ^c   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b Tokyo Electron US Holdings Inc   (United States)

^c SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE SCALING; CHEMICAL STATE; CRYSTALLINE STRUCTURES; ELECTRICAL PROPERTIES; EQUIVALENT OXIDE THICKNESS; FORMING GAS; GATE STACKS; GE DIFFUSIONS; GE(100); INTERFACE STATE DENSITIES; NITROGEN CONTENTS; OXYNITRIDE;

CAPACITANCE; HAFNIUM; HAFNIUM COMPOUNDS; LOGIC GATES; NITRIDES; PHASE INTERFACES;

GERMANIUM;

EID: 65549142644     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116624     Document Type: Article

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