Electron spin resonance features of the Ge P b1 dangling bond defect in condensation-grown (100)Si/SiO 2/Si 1-xGe x/SiO 2 heterostructures

Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

  Somers, P ^a,b   Stesmans, A ^a   Souriau, L ^b   Afanas'Ev, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED MAGNETIC FIELDS; AS INTERFACES; G-VALUES; GAUSSIANS; GE ATOM; GE FRACTION; HYDROGEN PASSIVATION; HYPERFINE INTERACTIONS; INHOMOGENEOUS BROADENING; INTERFACE DEFECTS; MAGNETIC FIELD ANGLE; MAXIMUM DENSITY; MULTI FREQUENCY; PEAK-TO-PEAK; PRINCIPAL AXIS; SI ATOMS; SPIN-ORBIT COUPLING CONSTANTS; STRAINED BONDS; SYSTEMATIC VARIATION;

AUTOMOBILE MANUFACTURE; CONDENSATION; DANGLING BONDS; DEFECTS; HYDROGEN; POINT DEFECTS; SILICON; SPECTRUM ANALYSIS;

GERMANIUM;

EID: 84867525295     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4748313     Document Type: Article

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