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Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1533-1536

Impact of GeOx interfacial layer thickness on Al 2O3/Ge MOS interface properties

(5) Zhang, R a Iwasaki, T a Taoka, N a Takenaka, M a Takagi, S a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Germanium; MOS interface; Plasma post oxidation

Indexed keywords

CONDUCTANCE METHOD; ELECTRON CYCLOTRON RESONANCE PLASMA; EQUIVALENT OXIDE THICKNESS; GATE STACKS; INTERFACE QUALITY; INTERFACE STATE DENSITY; INTERFACIAL LAYER; INTERFACIAL-LAYER THICKNESS; LOW TEMPERATURES; MOS INTERFACE; POST-OXIDATION; TRADE-OFF RELATIONSHIP; ULTRA-THIN;

ALUMINUM; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; LOGIC GATES; OXIDATION; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 79958059543 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.130 Document Type: Conference Paper

Times cited : (64)

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