Interface instabilities and electronic properties of ZrO 2 on silicon (100)

Journal of Applied Physics

Volumn 96, Issue 5, 2004, Pages 2665-2673

  Fulton, C C ^a   Cook Jr , T E ^a   Lucovsky, G ^a   Nemanich, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE INSULATORS; HIGH-K DIELECTRICS; INTERFACE INSTABILITIES; VACUUM ANNEALING;

ANNEALING; CAPACITANCE; CHARGE TRANSFER; DENSITY (SPECIFIC GRAVITY); DIELECTRIC MATERIALS; ELECTRONIC PROPERTIES; GATES (TRANSISTOR); SILICON; SPECTROSCOPIC ANALYSIS; SURFACE PROPERTIES; THIN FILMS;

ZIRCONIUM COMPOUNDS;

EID: 4944219625     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1776313     Document Type: Article

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