Defect energy levels in HfO2 high-dielectric-constant gate oxide

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Xiong, K ^a   Robertson, J ^a   Gibson, M C ^b   Clark, S J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRAPS; OXYGEN; PERMITTIVITY; SILICON;

DENSITY FUNCTIONAL METHODS; OXIDE VALENCE BAND; OXYGEN VACANCY;

HAFNIUM COMPOUNDS;

EID: 27344443406     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2119425     Document Type: Article

References (30)

1. E. P. Gusev, D. A. Buchanan, E. Cartier, A. Kumar, S. Guha, A. Callegari, S. Zafar, P. C. Jamison, D. A. Neumayer, M. Copel, M. A. Gribelyuk, H. Okorn-Schmidt, C. D'Emic, P. Kozlowski, K. Chan, N. Bojarczuk, L. A. Ragnarsson, P. Ronsheim, K. Rim, R. J. Fleming, A. Mocuta, and A. Ajmera, Tech. Dig. - Int. Electron Devices Meet. 2001, 455.
2. W. J. Zhu and T. P. Ma, IEEE Electron Device Lett. 25, 89 (2004).
3. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, G. Groeseneken, H. E. Maes, and U. Schwalke, IEEE Electron Device Lett. 24, 87 (2003).
4. L. Pantisano, E. Cartier, A. Kerber, R. Degraeve, M. Lorenzini, M. Rosmeulen, G. Groesenken, and H. E. Maes, Tech Dig VLSI 2003, 163.
5. S. Zafar, A. Callegari, E. P. Gusev, and M. V. Fischetti, J. Appl. Phys. 93, 9298 (2003).
6. S. Zafar, E. P. Gusev, and E. Cartier, IEEE Trans. Device Mater. Reliab. 5, 45 (2005).
7. A. Y. Kang, P. M. Lenahan, and J. F. Conley, Appl. Phys. Lett. 83, 3407 (2003).
8. P. M. Lenahan and J. F. Conley, IEEE Trans. Device Mater. Reliab. 5, 90 (2005).
9. A. S. Foster, F. L. Gejo, A. L. Shluger, and R. N. Nieminen, Phys. Rev. B 65, 174117 (2002).
10. A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, and R. N. Nieminen, Phys. Rev. B 64, 224108 (2001).
11. K. Torii, K. Shirashi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima, and T. Arikado, Tech. Dig. - Int. Electron Devices Meet. 2004, 129.
12. C. Shen, M. F. Li, X. P. Wang, H. Y. Yu, Y. P. Feng, A. T. L. Lim, Y. C. Yeo, D. S. H. Chan, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet. 2004, 733.
13. J. Kang, E. C. Lee, K. J. Chang, and Y. G. Jin, Appl. Phys. Lett. 84, 3894 (2004).
14. B. Kralik, E. K. Chang, and S. G. Louie, Phys. Rev. B 57, 7027 (1998).
15. J. Muscat, A. Wander, and N. M. Harrison, Chem. Phys. Lett. 342, 397 (2001).
16. B. M. Bylander and L. Kleinman, Phys. Rev. B 41, 7868 (1990).
17. A. Seidl, A. Gorling, P. Vogl, J. A. Majewski, and M. Levy, Phys. Rev. B 53, 3764 (1996).
18. P. P. Rushton, D. J. Tozer, and S. J. Clark, Phys. Rev. B 65, 235203 (2002).
19. V. Milman, B. Winkler, J. A. White, C. J. Pickard, and M. C. Payne, Int. J. Quantum Chem. 77, 895 (2000).
20. S. Sayan, E. Garfunkel, and S. Suzer, Appl. Phys. Lett. 80, 2135 (2002).
21. M. Oshima, Appl. Phys. Lett. 0003-6951 10.1063/1.1611272 83, 2172 (2003); Q. Li, Appl. Phys. Lett. 85, 6155 (2004).
22. M. Oshima, Appl. Phys. Lett. 0003-6951 10.1063/1.1611272 83, 2172 (2003); Q. Li, Appl. Phys. Lett. 85, 6155 (2004).
23. J. Robertson, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.591472 18, 1785 (2000); P. W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).
24. J. Robertson, J. Vac. Sci. Technol. B 0734-211X 10.1116/1.591472 18, 1785 (2000); P. W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).
25. H. Takeuchi, D. Ha, and T. J. King, J. Vac. Sci. Technol. A 22, 1337 (2004).
26. M. Bataiev, S. P. Tumakha, Y. M. Strzhechny, S. H. Goss, L. J. Brillson, C. L. Hinkle, and G. Lucovsky, MRS Spring, 2005, paper G8.3.
27. J. Mitard, C. Leroux, and G. Reimbold, Proc. NATO Workshop on Defects in High K Dielectrics, edited by, E. P. Gusev, (Springer, Berlin, 2005).
28. M. Houssa, M. Touminen, M. Naili, V. Afanasev, A. Stesmans, S. Haukka, and M. M. Heyns, J. Appl. Phys. 87, 8615 (2000).
29. E. P. Gusev, C. Chabral, B. P. Linder, Y. H. Kim, K. Maitra, E. Cartier, H. Nayfeh, R. Amos, M. Copel, M. Gribelyuk, and S. Zafar, Tech. Dig. - Int. Electron Devices Meet. 2004, p 729.
30. C. Shen, M. F. Li, H. Y. Yu, X. P. Wang, Y. C. Yeo, D. S. H. Chan, and D. L. Kwong, Appl. Phys. Lett. 86, 093510 (2005).