Challenges and opportunities in advanced Ge pMOSFETs

Materials Science in Semiconductor Processing

Volumn 15, Issue 6, 2012, Pages 588-600

  Simoen, E ^a   Mitard, J ^a   Hellings, G ^a   Eneman, G ^a   De Jaeger, B ^a   Witters, L ^a   Vincent, B ^a   Loo, R ^a   Delabie, A ^a   Sioncke, S ^a   Caymax, M ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

CMOS; Germanium; High k gate stack; Hole mobility; Surface passivation

Indexed keywords

CMOS; FUTURE TECHNOLOGIES; HIGH-K GATE STACKS; HIGH-PERFORMANCE CMOS; OFF-CURRENT; ON-CURRENTS; P-MOSFETS; SHORT-CHANNEL EFFECT; SILICON PLATFORMS; STATE OF THE ART; SURFACE PASSIVATION;

CMOS INTEGRATED CIRCUITS; HOLE MOBILITY; INTERFACES (MATERIALS); LOGIC GATES; MOSFET DEVICES;

GERMANIUM;

EID: 84870055992     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.04.017     Document Type: Review

References (157)

1. H.L. Shang, H. Okorn-Schmidt, K.K. Chan, M. Copel, J.A. Ott, P.M. Kozlowski, et al., in: IEDM Technical Digest (The IEEE, New York), 2002, pp. 441-444.
2. C.O. Chui, S. Ramanathan, B.B. Triplet, P.C. McIntyre, and K.C. Saraswat IEEE Electron Device Letters 23 2002 473 476
3. D.S. Yu, K.C. Chiang, C.F. Cheng, A. Chin, C. Zhu, M.F. Li, and D.-L. Kwong IEEE Electron Device Letters 25 2004 559 562
4. M. Kobayashi, J. Mitard, T. Irisawa, T.-Y. Hoffmann, M. Meuris, K. Saraswat, et al. in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2010, pp. 215-216.
5. M. Kobayashi, J. Mitard, T. Irisawa, T.-Y. Hoffmann, M. Meuris, and K. Saraswat IEEE Transactions On Electron Devices 58 2011 384 391
6. 〈http:/www.public.itrs.net〉
7. J. Mitard, B. De Jaeger, F.E. Leys, G. Hellings, K. Martens, G. Eneman, et al., in: IEDM Technical Digest (The IEEE, New York), 2008, pp. 873-876.
8. G. Hellings, J. Mitard, G. Eneman, B. De Jaeger, D.P. Brunco, and D. Shamiryan IEEE Electron Device Letters 30 2009 88 90
9. J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, and M. Kobayashi Japanese Journal of Applied Physics 50 2011 04DC17/1-4
10. L. Hutin, C. Le Royer, J.-F. Damlencourt, J.-M. Hartmann, H. Grampeix, and V. Mazzocchi IEEE Electron Device Letters 31 2010 234 236
11. M. Caymax, G. Eneman, F. Bellenger, C. Merckling, A. Delabie, G. Wang, et al., in: IEDM Technical Digest (The IEEE, New York), 2009, pp. 461-464.
12. M.V. Fischetti, and S.E. Laux Journal of Applied Physics 80 1996 2234 2252
13. T. Krishnamohan, D. Kim, T.V. Dinh, A. Pham, B. Meinerzhagen, C. Jungemann, K. Saraswat, in: IEDM Technical Digest (The IEEE, New York), 2008, pp. 899-902.
14. J. Vanhellemont, and E. Simoen Journal of The Electrochemical Society 154 2007 H572 H583
15. S. Brotzmann, H. Bracht, J. Lundsgaard Hansen, A. Nylandsted Larsen, E.E. Haller, J.S. Christensen, and P. Werner Physical Review B 77 2008 235207/1 3
16. E. Simoen, and J. Vanhellemont Journal of Applied Physics 106 2009 103516/1 4
17. H. Bracht, S. Schneider, and R. Kube Microelectronic Engineering 88 2011 452 457
18. R. Duffy, M. Shayesteh, M. White, J. Kearney, A.-M. Kelleher, in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 35, 2011, pp. 185-192.
19. K. Martens, A. Firrincieli, R. Rooyackers, B. Vincent, R. Loo, S. Locorotondo, et al., in: IEDM Technical Digest (The IEEE, New York), 2010, pp. 429-431.
20. K. Martens, R. Rooyackers, A. Firrincieli, B. Vincent, R. Loo, and B. De Jaeger Applied Physics Letters 98 2011 013504/1 3
21. A. Firrincieli, K. Martens, R. Rooyackers, B. Vincent, E. Rosseel, and E. Simoen Applied Physics Letters 99 2011 242104/1 3
22. G. Hellings, E. Rosseel, T. Clarysse, D.H. Petersen, O. Hansen, and P.F. Nielsen Microelectronic Engineering 88 2011 347 350
23. A. Satta, E. Simoen, T. Clarysse, B. De Jaeger, A. Benedetti, and I. Hoflijk Journal of The Electrochemical Society 153 2006 G229 G233
24. H. Hellings, C. Wuendisch, G. Eneman, E. Simoen, and T. Clarysse Electrochemical and Solid State Letters 12 2009 H417 H419
25. G. Impellizzeri, S. Mirabella, A. Irrera, M.G. Grimaldi, and E. Napolitani Journal of Applied Physics 106 2009 013518/1 6
26. V. Heera, A. Müklich, M. Posselt, M. Voelskow, C. Wündisch, and B. Schmidt Journal of Applied Physics 107 2010 053508/1 8
27. G. Impellizzeri, E. Napolitani, S. Boninelli, V. Privitera, T. Clarysse, and W. Vandervorst Applied Physics Express 5 2012 021301/1 3
28. S. Takagi, M. Takenaka, in: ECS Transactions (The Electrochem Society, Pennington, NJ), vol. 35, 2011, pp. 279-298.
29. C. Claeys, and E. Simoen Germanium-based Technologies: From Materials to Devices 2007 Elsevier
30. E. Simoen, G. Eneman, M. Bargallo Gonzalez, D. Kobayashi, A. Luque Rodriguez, J.-A. Jiménez Tejada, and C. Claeys Journal of The Electrochemical Society 158 2011 R27 R36
31. D.S. Yu, A. Chin, C.C. Liao, C.F. Lee, C.F. Cheng, M.F. Li, W.J. Yoo, and S.P. McAlister IEEE Electron Device Letters 26 2005 118 120
32. S. Maikap, M.H. Lee, S.T. Chang, and C.W. Liu Semiconductor Science And Technology 22 2007 342 347
33. D. Kuzum, A.J. Pethe, T. Krishnamohan, and K.C. Saraswat IEEE Transactions On Electron Devices 56 2009 648 655
34. A. Chin, W.B. Chen, B.S. Shie, K.C. Hsu, P.C. Chen, C.H. Cheng, et al., in: Proceedings of the 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (The IEEE, New York), 2010, pp. 978-981.
35. S. Dissanayake, K. Tomiyama, S. Sugahara, M. Takenaka, and S. Takagi Applied Physics Express 3 2010 041302/1 3
36. S. Dissanayake, Y. Zhao, S. Sugahara, M. Takenaka, and S. Takagi Journal of Applied Physics 109 2011 033709/1 8
37. Y. Shimura, T. Asano, O. Nakatsuka, and S. Zaima Applied Physics Express 5 2012 015501/1 3
38. O. Nakatsuka, N. Tsutsui, Y. Shimura, S. Takeuchi, A. Sakai, and S. Zaima Japanese Journal of Applied Physics 49 2010 04DA10/1-4
39. S. Zaima, O. Nakatsuka, Y. Shimura, M. Adachi, M. Nakamura, S. Takeuchi, et al., in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 41, 2011, pp. 231-238.
40. S. Gupta, R. Chen, B. Magyari-Kope, H. Lin, B. Yang, A. Nainani, et al., in: IEDM Technical Digest (The IEEE, New York), 2011, pp. 398-401.
41. G. Han, S. Su, C. Zhan, Q. Zhou, Y. Yang, L. Wang, et al., in: IEDM Technical Digest (The IEEE, New York), 2011, 402-404.
42. B. Vincent, F. Gencarelli, D. Lin, L. Nyns, O. Richard, H. Bender, et al., in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 41, 2011, pp. 239-248.
43. X. Wang, H. Shang, P. Oldiges, K. Rim, S. Koester, M. Ieong, in: Proceedings of Simulation of Semiconductor Processes and Devices 2004 - SISPAD 2004, 2004, pp. 65-68.
44. B. Ghosh, X.-F. Fan, L.F. Register, and S.K. Banerjee IEEE Transactions On Electron Devices 53 2006 533 537
45. K. Sawano, K. Tomaya, R. Masutomi, T. Okamoto, N. Usami, and K. Arimoto Applied Physics Letters 95 2009 122109/1 3
46. Y. Zhang, M.V. Fischetti, B. Sorée, W. Magnus, M. Heyns, and M. Meuris Journal of Applied Physics 106 2009 083704/1 9
47. Y. Zhang, M.V. Fischetti, B. Sorée, and T. O'Regan Journal of Applied Physics 108 2010 123713/1 9
48. H. Shang, J.O. Chu, S. Bedell, E.P. Gusev, P. Jamison, Y. Zhang, et al., in: IEDM Technical Digest (The IEEE, New York), 2004, pp. 157-160.
49. O. Weber, Y. Bogumilowicz, T. Ernst, J.-M. Hartmann, F. Ducroquet, F. Andrieu, et al., In: IEDM Technical Digest (The IEEE, New York), 2005, pp. 719-722.
50. K. Sawano, H. Satoh, Y. Kunishi, K. Nakagawa, and Y. Shiraki Semiconductor Science And Technology 22 2007 S161 S163
51. G. Nicolas, T.J. Grasby, D.J.F. Fulgoni, C.S. Beer, J. Parsons, M. Meuris, and M.M. Heyns IEEE Electron Device Letters 28 2007 825 827
52. T. Krishnamohan, A.-T. Phan, C. Jungemann, B. Meinerzhagen, K.C. Saraswat, in: ECS Transactions (The Electrochemical Society), vol. 16, 2008, pp. 397-403.
53. S.W. Bedell, A. Majumdar, J.A. Ott, J. Arnold, K. Fogel, S.J. Koester, and D.K. Sadana IEEE Electron Device Letters 29 2008 811 813
54. S.W. Bedell, N. Daval, K. Fogel, K. Shimizu, J. Ott, J. Newbury, D.K. Sadana, in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 19, 2009, pp. 155-164.
55. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, and A. Lochtefeld Journal of Applied Physics 97 2005 011101/1-28
56. V. Terzieva, L. Souriau, M. Caymax, D.P. Brunco, A. Moussa, and S. Van Elshocht Thin Solid Films 517 2008 172 177
57. D.P. Brunco, B. De Jaeger, G. Eneman, J. Mitard, G. Hellings, and A. Satta Journal of The Electrochemical Society 155 2008 H552 H561
58. V.A. Shah, A. Dobbie, M. Myronov, and D. Leadley Journal of Applied Physics 107 2010 063404/1 11
59. M. Myronov, A. Dobbie, V.A. Shah, X.-C. Liu, V.H. Nguyen, and D.R. Leadley Electrochemical and Solid-State Letters 13 2010 H388 H390
60. E. Simoen, G. Eneman, P. Verheyen, R. Loo, M. Bargallo Gonzalez, C. Claeys, in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 16, 2008, pp. 513-527.
61. E. Simoen, G. Brouwers, R. Yang, G. Eneman, M. Bargallo Gonzalez, and F. Leys Physica Status Solidi C 6 2009 1912 1917
62. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, and M. Myronov IEEE Transactions On Electron Devices 58 2011 3132 3139
63. J. Oh, P. Majhi, H.-D. Lee, S. Banerjee, R. Harris, H.-H. Tseng, and R. Jammy Japanese Journal of Applied Physics 47 2008 2656 2659
64. J. Mitard, C. Shea, B. De Jaeger, A. Pristera, G. Wang, M. Houssa, et al., in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2009, pp. 82-83.
65. G. Wang, F.E. Leys, L. Souriau R. Loo, M. Caymax, D.P. Brunco, et al., In: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 16, 2008, pp. 829-836.
66. R. Loo, G. Wang, L. Souriau, J.C. Lin, S. Takeuchi, G. Brammertz, and M. Caymax Journal of the Electrochemical Society 157 2010 H13 H21
67. H.-Y. Yu, J.-H. Park, A.K. Okyay, K.C. Saraswat, in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 16, 2008, pp. 823-828.
68. G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M.M. Heyns, and B. Blanpain Applied Physics Letters 94 2009 102115/1 3
69. E. Simoen, G. Brouwers, G. Eneman, M. Bargallo Gonzalez, B. De Jaeger, and J. Mitard Materials Science In Semiconductor Processing 11 2008 363 367
70. G. Eneman, B. De Jaeger, G. Hellings, J. Mitard, E. Simoen, and D.P. Brunco IEEE Transactions On Electron Devices 56 2009 3115 3122
71. R. Yang, G. Eneman, G. Wang, C. Claeys, and E. Simoen Journal of Applied Physics 106 2009 074511/1 6
72. G. Eneman, R. Yang, G. Wang, B. De Jaeger, R. Loo, and C. Claeys Thin Solid Films 518 2010 2489 2492
73. E. Simoen, G. Eneman, G. Wang, L. Souriau, R. Loo, M. Caymax, and C. Claeys Journal of the Electrochemical Society 157 2010 R1 R5
74. T.A. Langdo, C.W. Leitz, M.T. Currie, E.A. Fitzgerald, A. Lochtefeld, and D.A. Antoniadis Applied Physics Letters 76 2000 3700 3702
75. J.-S. Park, J. Bai, M. Curtin, M. Carroll, and A. Lochtefeld Applied Physics Letters 90 2007 052113/1 3
76. J.-S. Park, J. Bai, M. Curtin, M. Carroll, and A. Lochtefeld Journal of Vacuum Science and Technology B 26 2008 117 121
77. G. Wang, E. Rosseel, R. Loo, P. Favia, H. Bender, and M. Caymax Applied Physics Letters 96 2010 111903/1 3
78. G. Wang, E. Rosseel, R. Loo, P. Favia, H. Bender, and M. Caymax Journal of Applied Physics 108 2010 123517/1 8
79. T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, and K.C. Saraswat IEEE Transactions on Electron Devices 53 2006 990 999
80. C. Ní Cléirigh, O.O. Olubuyide, J.L. Hoyt, in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 3, 2006, pp. 963-972.
81. C. Ní Cléirigh, N.D. Theodore, H. Fukuyama, S. Mure, H.-U. Ehrke, A. Domenicucci, and J.L. Hoyt IEEE Transactions on Electron Devices 55 2008 2687 2694
82. L. Gomez, C. Ní Cléirigh, P. Hashemi, and J.L. Hoyt IEEE Electron Device Letters 31 2010 782 784
83. G. Eneman, S. Yamaguchi, C. Ortolland, S. Takeoka, L. Witters, T. Chiarella, et al., in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2010, pp. 41-42.
84. W. Yu, B. Zhang, Q.T. Zhao, J.-M. Hartmann, D. Buca, and A. Nichau Solid-State Electronics 62 2011 185 188
85. G. Eneman, S. Yamaguchi, C. Ortolland, S. Takeoka, M. Kobayashi, and L. Witters IEEE Transactions On Electron Devices 58 2011 2544 2550
86. J. Oh, S.-H. Lee, K.-S. Min, J. Huang, B.G. Min, B. Sassman. et al., in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2010, pp. 39-40.
87. K. Cheng, K. Khakifirooz, A. Kulkarni, P. Kanakasabapathy, S. Schmitz, S. Reznicek, et al., in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2009, pp. 212-213.
88. G. Hellings, L. Witters, R. Krom, J. Mitard, A. Hikavyy, R. Loo, et al., in: IEDM Technical Digest (The IEEE, New York), 2010, pp. 241-244.
89. V.P.-H Hu, Y.-S Wu, and P. Su Semiconductor Science and Technology 24 2009 045017/1 7
90. V.P.-H. Hu, M.-L. Fan, P. Su, C.-T. Chuang, in: IEDM Technical Digest (The IEEE, New York), 2011, pp. 753-756.
91. C.H. Lee, T. Nishimura, T. Tabata, D. Zhao, R. Ifuku, K. Nagashio, et al., in: Proceedings of IEEE International Silicon-On-Insulator Conference (The IEEE, New York), 2011, pp. 1-2.
92. A. Toriumi, C.H. Lee, S.K. Wang, T. Tabata, M. Yoshida, D.D. Zhao, et al., in: IEDM Technical Digest (The IEEE, New York), 2011, pp. 646-649.
93. E. Augendre, L. Sanchez, J.-M. Hartmann, W. Van Den Daele, S. Favier, E. Guiot, et al., In: Proceedings of IEEE International SOI Conference (The IEEE, New York), 2009, pp. 1-2.
94. D.D. Zhao, T. Nishimura, C.H. Lee, K. Nagashio, K. Kita, and A. Toriumi Applied Physics Express 4 2011 031302/1 3
95. D.D. Zhao, T. Nishimura, C.H. Lee, R. Ifuku, K. Nagashio, K. Kita, A. Toriumi, in: ECS Transactions (The Electrochem Society, Pennington, NJ), vol. 35, 2011, pp. 457-464.
96. T. Krishnamohan, D. Kim, C.D. Nguyen, C. Jungemann, Y. Nishi, and K.C. Saraswat IEEE Transactions On Electron Devices 53 2006 1000 1009
97. J. Feng, R. Woo, S. Chen, Y. Liu, P.B. Griffin, and J.D. Plummer IEEE Electron Device Letters 28 2007 637 639
98. K. Ikeda, M. Oda, Y. Kamimata, Y. Moriyama, and T. Tezuka Applied Physics Express 3 2010 124201/1 3
99. L. Hutin, M. Cassé, C. Le Royer, J.-F. Damlencourt, A. Pouydebasque, C. Xu, et al., in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2010, pp. 37-38.
100. M. Shayesteh, R. Duffy, B. McCarthy, A. Blake, M. White, J. Scully, et al., in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 35, 2011, pp. 27-34.
101. S.-H. Hsu, C.-L. Chu, W.-H. Tu, Y.-C. Fu, P.-J. Sung, H.-C. Chang, et al., in: IEDM Technical Digest (The IEEE, New York), 2011, pp. 825-828.
102. A. Pouydebasque, K. Romanjek, C. Le Royer, C. Tabone, B. Previtali, and F. Allain IEEE Transactions On Electron Devices 56 2009 3240 3244
103. N. Daval, C. Figuet, C. Aulnette, D. Landru, C. Drazek, K.K. Bourdelle, et al., in: ECS Trans (The Electrochemical Society, Pennington, NJ), vol. 35, 2011, pp. 29-38.
104. T. Tezuka, N. Sugiyama, and S. Takagi Applied Physics Letters 79 2001 1798-1800
105. Q.T. Nguyen, J.F. Damlencourt, B. Vincent, V. Loup, Y. Le Cunff, P. Gentil, S. Cristoloveanu, in: IEEE Int S.O.I. Conference Proceedings (The IEEE, New York), 2008, pp. 103-104.
106. B. Vincent, J.F. Damlencourt, Y. Morand, A. Pouydebasque, C. Le Royer, and L. Clavelier Materials Science in Semiconductor Processings 11 2008 205 213
107. E. Batail, S. Monfray, C. Tabone, O. Kermarrec, J.F. Damlencourt, P. Gautier, et al., in: IEDM Technical Digest (The IEEE, New York), 2008, pp. 1-4.
108. C. Le Royer, J.-F. Damlencourt, B. Vincent, K. Romanjek, Y. Le Cunff, and H. Grampeix Solid-State Electronics 59 2011 2 7
109. Q.T. Nguyen, J.F. Damlencourt, B. Vincent, L. Clavelier, Y. Morand, P. Gentil, and S. Cristoloveanu Solid-State Electronics 51 2007 1172 1179
110. N. Hirashita, Y. Moriyama, S. Nakaharai, T. Irisawa, N. Sugiyama, and S. Takagi Applied Physics Express 1 2008 101401/1 3
111. H. Yang, D. Wang, and H. Nakashima Applied Physics Letters 95 2009 122103/1 3
112. L. Souriau, T. Nguyen, E. Augendre, R. Loo, V. Terzieva, and M. Caymax Journal of the Electrochemical Society 156 2009 H208 H213
113. K. Romanjek, L. Hutin, C. Le Royer, A. Pouydebasque, M.-A. Jaud, and C. Tabone Solid-State Electronics 53 2009 723 729
114. M. Satoh, K. Arimoto, K. Nakagawa, S. Koh, K. Sawano, and Y. Shiraki Japanese Journal of Applied Physics 47 2008 4630 4633
115. S. Takagi, Tomiyama K., S. Dissanayake, M. Takenaka, In: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 33, 2010, pp. 501-509.
116. J. Suh, R. Nakane, N. Taoka, M. Takenaka, and S. Takagi Applied Physics Letters 99 2011 142108/1 3
117. B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. Morand Applied Physics Letters 90 2007 074101/1 3
118. B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand, and L. Clavelier Semiconductor Science and Technology 22 2007 237 244
119. B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, and D.H. Petersen Applied Physics Letters 99 2011 152103/1 3
120. F.E. Leys, R. Bonzom, B. Kaczer, T. Janssens, W. Vandervorst, and B. De Jaeger Materials Science in Semiconductor Processing 9 2006 679 684
121. M. Caymax, F. Leys, J. Mitard, K. Martens, L. Yang, and G. Pourtois Journal of the Electrochemical Society 156 2009 H979 H985
122. A. Delabie, F. Bellenger, M. Houssa, T. Conard, S. Van Elshocht, and M. Caymax Applied Physics Letters 91 2007 082904/1 3
123. A. Toriumi, T. Tabata, C.H. Lee, T. Nishimura, K. Kita, and K. Nagashio Microelectronic Engineering 86 2009 1571 1576
124. A. Toriumi, C.H. Lee, T. Nishimura, S.K. Wang, K. Kita, K. Nagashio, in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 35, 2011, pp. 443-456.
125. D. Lin, G. Brammertz, S. Sioncke, C. Fleischmann, A. Delabie, K. Martens, et al., in: IEDM Technical Digest (The IEEE, New York), 2009, pp. 327-330.
126. W.C. Lee, T.D. Lin, L.K. Chu, P. Chang, Y.C. Chang, R.L. Chu, et al., In: Proc of the 10th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) (The IEEE, New York), 2010, pp. 1180-1183.
127. M. Yokoyama, S.H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, et al., in: Symposium on VLSI Technical Digest Technical Papers (The IEEE, New York), 2011, pp. 60-71.
128. T. Maeda, Y. Urabe, T. Itatani, H. Ishii, N. Miyata, T. Yasuda, et al., in: Symposium on VLSI Technology Digest Technical Papers (The IEEE, New York), 2011, pp. 62-63.
129. M. Heyns, A. Alian, G. Brammertz, M. Caymax, Y.C. Chang, L.K. Chu, et al., in: IEDM Technical Digest (The IEEE, New York), 2011, pp. 299-302.
130. F. Andrieu, T. Ernst, F. Lime, F. Rochette, K. Romanjek, S. Barraud, et al., in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2005, pp. 176-177.
131. R. Xie, T.H. Phung, W. He, Z. Sun, M. Yu, Z. Cheng, C. Zhu, in: IEDM Technical Digest (The IEEE, New York), 2008, pp. 393-396.
132. Y. Kamata, A. Takashima, Y. Kamimata, T. Tezuka, in: Symposium on VLSI Technology Digest of Technical Papers (The IEEE, New York), 2009, pp. 78-79.
133. R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi IEEE Transactions On Electron Devices 59 2012 335 341
134. J. Mitard, K. Martens, B. De Jaeger, J. Franco, C. Shea, C. Plourde, et al., in: Proceedings of ESSDERC 2009 - 39th European Solid-State Device Research Conference (The IEEE, New York), 2009, pp. 411-414.
135. J. Mitard, B. Vincent, B., De Jaeger, R. Krom, R. Loo, G. Eneman, et al., in: ECS Transactions (The Electrochemical Society, Pennington, NJ), vol. 28, 2010, pp. 157-169.
136. B. Vincent, R. Loo, W. Vandervorst, J. Delmotte, B. Douhard, and V.K. Valev Solid-State Electronics 60 2011 116 121
137. K. Martens, J. Mitard, B. De Jaeger, M. Meuris, H. Maes, G. Groeseneken, et al., in: Proceedings of ESSDERC 2008 - 38th European Solid-State Device Research Conference (The IEEE, New York), 2008, pp. 138-41.
138. B. Vincent, W. Vandervorst, M. Caymax, and R. Loo Applied Physics Letters 95 2009 262112/1 3
139. N. Taoka, W. Mizubayashi, Y. Morita, S. Migita, H. Ota, and S. Takagi Journal of Applied Physics 108 2010 104511/1 7
140. C.H. Lee, T. Nishimura, T. Tabata, S.K. Wang, K. Nagashio, K. Kita, A. Toriumi, in: IEDM Technical Digest (The IEEE, New York), 2010, pp. 416-419.
141. Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi Japanese Journal of Applied Physics 50 2011 010109/1 7
142. D. Kuzum, J.-H. Park, T. Krishnamohan, H.-S.P. Wong, and K.C. Saraswat IEEE Transactions on Electron Devices 58 2011 1015 1022
143. M. Kobayashi, G. Thareja, M. Ishibashi, Y. Sun, P. Griffin, and J. McVittie Journal of Applied Physics 106 2009 104117/1 7
144. V.V. Afanas'ev, A. Stesmans, A. Delabie, F. Bellenger, M. Houssa, and R.R. Lieten Materials Science in Semiconductor Processing 11 2008 230 235
145. S. Sioncke, H.C. Lin, L. Nyns, G. Brammertz, A. Delabie, and T. Conard Journal of Applied Physics 110 2011 084907/1 8
146. A. Delabie, A. Alian, F. Bellenger, M. Caymax, T. Conard, and A. Franquet Journal of the Electrochemical Society 156 2009 G163 G167
147. R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi Journal of the Electrochemical Society 158 2011 G178 G184
148. R. Xie, T.H. Phung, W. He, M. Yu, and C. Zhu IEEE Transactions on Electron Devices 56 2009 1330 1337
149. R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, S. Takagi, in: Symposium on VLSI Technology Digest on Technical Papers (The IEEE, New York), 2011, pp. 56-57.
150. R. Zhang, N. Taoka, P.-C. Huang, M. Takenaka, S. Takagi, in: IEDM Technical Digest (The IEEE, New York), 2011, pp. 642-645.
151. R. Zhang, T. Iwasaki, N. Taoka, M. Takenaka, and S. Takagi Applied Physics Letters 98 2011 112902/1 3
152. D.H. Lee, H. Imajo, T. Kanashima, and M. Okuyama Japanese Journal of Applied Physics 50 2011 04DA11/1 4
153. S. Sioncke, H.C. Lin, G. Brammertz, A. Delabie, T. Connard, and A. Franquet Journal Of The Electrochemical Society 158 2011 H687 H692
154. A. Dimoulas, Y. Panaiotatos, A. Sotiropoulos, P. Tsipas, D.P. Brunco, and G. Nicholas Solid-State Electronics 51 2007 1508 1514
155. C. Henkel, S. Abermann, O. Bethge, G. Pozzovivo, P. Klang, M. Reiche, and E. Bertagnolli IEEE Transactions on Electron Devices 57 2010 3295-3302
156. C. Andersson, M.J. Süess, D.J. Webb, C. Marchiori, M. Sousa, and D. Caimi Journal of Applied Physics 110 2011 114503/1 7
157. Y. Kamata, K. Ikeda, Y. Kamimata, T. Tezuka, in: Symposium on VLSI Technol Dig Tech Papers, 2010, pp. 211-212.