Dopant compensation in HfO2 and other high K oxides

Applied Physics Letters

Volumn 104, Issue 19, 2014, Pages

  Li, H ^a   Guo, Y ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; SEMICONDUCTOR DOPING;

DEFECT COMPLEX; DOPANT COMPENSATIONS; GAP STATE; HIGH-K OXIDES; WIDE-GAP OXIDES;

HAFNIUM OXIDES;

EID: 84900837646     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4878503     Document Type: Article

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