Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction

Applied Physics Letters

Volumn 86, Issue 21, 2005, Pages 1-3

  Morais, J ^a   Miotti, L ^a   Bastos, K P ^a   Teixeira, S R ^a   Baumvol, I J R ^b   Rotondaro, A L P ^c   Chambers, J J ^c   Visokay, M R ^c   Colombo, L ^c   Alves, M C Martins ^a  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LEAST SQUARES FITTING; NUCLEAR RESONANCE ANALYSIS; PHASE STABILITY; X RAY ABSORPTION SPECTROSCOPY;

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

DIELECTRIC FILMS;

EID: 20844445585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1935042     Document Type: Article

References (20)

1. The International Technology Roadmap for Semiconductors (Semiconductor Industry Association, 2003); http:public.itrs.net
2. J. Morais, L. Miotti, G. V. Soares, S. R. Teixeira, R. P. Pezzi, K. P. Bastos, I. J. R. Baumvol, A. L. P. Rotondaro, J. J. Chambers, M. R. Visokay, and L. Colombo, Appl. Phys. Lett. 81, 1669 (2002).
3. A. L. P. Rotondaro, M. R. Visokay, J. J. Chambers, A. Shanware, R. Khamankar, H. Bu, R. T. Laaksonen, L. Tsung, M. Douglas, R. Kuan, M. J. Bevan, T. Grider, J. McPherson, and L. Colombo, in Symposium on VLSI Technology Digest of Technical Papers (Honolulu, HI, 2002), pp. 148-149.
4. M. Koyama, A. Kaneko, T. Ino, M. Koike, Y. Kamata, R. Iijima, Y. Kamimuta, A. Takashima, M. Suzuki, C. Hongo, S. Inumiya, M. Takayanagi, and A. Nishiyama, in Technical Digest of IEEE International Electron Device Meeting (2002), pp. 849-852.
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
6. W. J. Qi, R. Nieh, E. Dharamarajan, B. H. Lee, Y. Jeon, L. Lang, K. Onishi, and J. C. Lee, Appl. Phys. Lett. 77, 1704 (2000).
7. D. A. Neumayer and E. Cartier, J. Appl. Phys. 90, 1801 (2001).
8. S. Stemmer, Z. Chen, C. G. Levi, P. S. Lysaght, B. Foran, J. A. Gisby, and J. R. Taylor, Jpn. J. Appl. Phys., Part 1 42, 3593 (2003).
9. M. A. Quevedo-Lopez, M. El-Bouanani, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatuo, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 81, 1074 (2002).
10. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002).
11. H. C. N. Tolentino, A. Y. Ramos, M. C. M. Alves, R. A. Barrea, E. Tamura, J. C. Cezar, and N. Watanabe, J. Synchrotron Radiat. 8, 1040 (2001).
12. H. C. N. Tolentino, V. Compagnon-Caillol, F. C. Vincentin, and M. Abbate, J. Synchrotron Radiat. 5, 539 (1998).
13. A. L. Ankudinov, B. Ravel, J. J. Rehr, and S. D. Conradson, Phys. Rev. B 58, 7565 (1998).
14. T. Ressler, J. Synchrotron Radiat. 5, 118 (1998).
15. M. Brown, R. E. Peierls, and E. A. Stern, Phys. Rev. B 15, 738 (1977).
16. G. Lucovsky and G. B. Raynor, Jr., Appl. Phys. Lett. 77, 2912 (2000).
17. A. S. Foster, F. L. Gejo, A. L. Shluger, and R. M. Nieminen, Phys. Rev. B 65, 174117 (2002).
18. D. Cabaret, M. L. Grand, A. Ramos, A.-M. Flank, S. Rossano, L. Galoisy, G. Calas, and D. Ghaleb, J. Non-Cryst. Solids 210, 289 (2001).
19. F. W. Lytle, P. S. P. Wei, R. B. Greegor, G. H. Via, and J. H. Sinfelt, J. Chem. Phys. 70, 4849 (1979).
20. M. S. Akbar, S. Gopalan, H.-J. Cho, K. Onishi, R. Choi, R. Nieh, C. S. Kang, Y. H. Kim, J. Han, S. Krishnan, and J. C. Lee, Appl. Phys. Lett. 82, 1757 (2003).