First-principles study on the concentrations of native point defects in high-dielectric-constant binary oxide materials

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 5, 2008, Pages 227-229

  Zheng, J X ^a   Ceder, G ^a,b   Chim, W K ^a,c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY OXIDES; ELECTRON TRAPPING; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; FRENKEL PAIRS; NEUTRAL OXYGEN VACANCY; OXYGEN DEFECT;

DEFECTS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; OXYGEN; POINT DEFECTS; ZIRCONIUM ALLOYS;

OXYGEN VACANCIES;

EID: 70449638190     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802152     Document Type: Article

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