Epitaxial growth of LaAlO3 on SrTiO3-buffered Si (001) substrates by atomic layer deposition

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 150-157

  Ngo, Thong Q ^a   Posadas, Agham ^b   McDaniel, Martin D ^a   Ferrer, Domingo A ^c   Bruley, John ^d   Breslin, Chris ^d   Demkov, Alexander A ^b   Ekerdt, John G ^a  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c IBM   (United States)

^d IBM RESEARCH   (United States)

Author keywords

A1. Crystal structure; A1. Interfaces; A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Atomic layer deposition; B1. Aluminates

Indexed keywords

ALUMINUM COMPOUNDS; AMORPHOUS FILMS; ANNEALING; ATOMS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); LANTHANUM; LANTHANUM ALLOYS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; STRONTIUM TITANATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING PROCESS; B1. ALUMINATES; FILM CRYSTALLINITY; LANTHANUM ALUMINATE; POST DEPOSITION ANNEALING; SI (001) SUBSTRATE; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; TRIMETHYLALUMINUM;

ATOMIC LAYER DEPOSITION;

EID: 84885615020     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.10.032     Document Type: Article

References (57)

1. R.A. McKee, F.J. Walker, M.F. Chisholm, Crystalline oxides on silicon: the first five monolayers, Physical Review Letters 81 (1998) 3014-3017.
2. J.W. Reiner, A.M. Kolpak, Y. Segal, K.F. Garrity, S. Ismail-Beigi, C.H. Ahn, F.J. Walker, Crystalline oxides on silicon, Advanced Materials 22 (2010) 2919-2938.
3. R. Droopad, Z. Yu, H. Li, Y. Liang, C. Overgaard, A. Demkov, X. Zhang, K. Moore, K. Eisenbeiser, M. Hu, J. Curless, J. Finder, Development of integrated heterostructures on silicon by MBE, Journal of Crystal Growth 251 (2003) 638-644.
4. N. Izyumskaya, Y. Alivov, H. Morkoç, Oxides, oxides, and more oxides: high-κ oxides, ferroelectrics, ferromagnetics, and multiferroics, Critical Reviews in Solid State and Materials Sciences 34 (2009) 89-179.
5. S. Coh, T. Heeg, J.H. Haeni, M.D. Biegalski, J. Lettieri, L.F. Edge, K.E. O'Brien, M. Bernhagen, P. Reiche, R. Uecler, S. T-McKinstry, D.G. Schlom, D. Vanderbilt, Si-compatible candidates for high-κ dielectrics with the Pbnm perovskite structure, Physical Review B 82 (2010) 064101-064116.
6. H. Li, X. Hu, Y. Wei, Z. Yu, X. Yang, R. Droopad, A.A. Demkov, J. Erwards, K. Moore, W. Ooms, J. Kulik, P. Fejes, Two-dimensional growth of high-quality strontium titanate thin films on Si, Journal of Applied Physics 39 (2003) 4521-4525.
7. 3 grown on Si(001) by molecular beam epitaxy, Journal of applied physics 111 (2012) 064112-064117.
8. Z. Yu, J. Ramdani, J.A. Curless, C.D. Overgaard, J.M. Finder, R. Droopad, K.W. Eisenbeiser, J.A. Hallmark, W.J. Ooms, V.S. Kaushik, Epitaxial oxide thin films on Si(001), Journal of Vacuum Science & Technology B 18 (2000) 2139-2145.
9. M.J. Dicken, K. Diest, Y.B. Park, H.A. Atwater, Growth and optical property characterization of textured barium titanate thin films for photonic applications, Journal of Crystal Growth 300 (2007) 330-335.
10. 3 as gate dielectric for future CMOS technology, Microelectronic Engineering 84 (2007) 1869-1873.
11. J.W. Seo, Ch. Dieker, A. Tapponnier, C. Marchiori, M. Sousa, J.-P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas, Epitaxial germanium-on-insulator grown on (001) Si, Microelectronic Engineering 84 (2007) 2328-2331.
12. 3 epitaxially grown on Si(100), Applied Physics Letters 98 (2011) 055104.
13. M.P. Warusawithana, C. Cen, C.R. Sleasman, J.C. Woicik, Y. Li, L.F. Kourkoutis, J.A. Klug, H. Li, P. Ryan, L.P. Wang, M. Bedzyk, D.A. Muller, L.Q. Chen, J. Levy, D.G. Schlom, A ferroelectric oxide made directly on silicon, Science 324 (2009) 367-370.
14. 3 {100} and {110} surfaces, Surface Science 360 (1996) 180-186.
15. H. Schneidewind, M. Manzel, G. Bruchlos, K. Kirsch, TlBaCaCuO-(2212) thin films on lanthanum aluminate and sapphire substrates for microwave filters, Superconductor Science and Technology 14 (2001) 200-212.
16. G.H. Thomas, E.D. Specht, J.Z. Larese, Z.B. Xue, D.B. Beach, Growth of epitaxial films of sodium potassium tantalate and niobate on single crystal lanthanum aluminate [100] substrates, Journal of Materials Research 12 (2008) 3281-3287.
17. 3 heterostructures, Applied Physics Letters 84 (2004) 1573-1575.
18. H. Schneidewind, G. Bruchlos, Superconducting Hg-Ba-Ca-Cu-O thin films on lanthanum aluminate and sapphire substrates, Transactions on Applied Superconductivity 13 (2003) 2766-2768.
19. S.B. Majumder, M. Jain, A. Martinez, R.S. Katiyar, F.W. van Keuls, F.A. Miranda, Sol-gel derived grain oriented barium strontium titanate thin films for phase shifter applications, Journal of Applied Physics 90 (2001) 896-903.
20. 3 single crystal: an atomic force microscopy study, Scripta Materialia 49 (2003) 903-908.
21. J. Robertson, High dielectric constant gate oxides for metal oxide Si transistors, Reports on Progress in Physics 69 (2006) 327-396.
22. C. Zhao, C.Z. Zhao, M. Werner, S. Taylor, P.R. Chalker, Advanced CMOS gate stack: present research progress, ISRN Nanotechnology 2012 (2011) 689023-689058.
23. 〈http://www.itrs.net/Links/2011ITRS/Home2011.htm〉.
24. 3 heterointerface, Nature 427 (2004) 423-426.
25. 3 interface, Nature Communications 2 (2011) 188.
26. 3, Physical Review Letters 99 (2007) 155502-155505.
27. 3, Nature 456 (2008) 624-627.
28. 3 interfaces, Nature Physics 7 (2011) 762-766.
29. 3 interface, Nature Physics 7 (2011) 767-771.
30. 3 interfaces, Physical Review Letters 108 (2012) 186802-186806.
31. J.H. Jun, J. Jun, D.J. Choi, Properties of lanthanum aluminate thin film deposited by MOCVD, Electrochemical and Solid-State Letters 6 (2003) F37-F39.
32. A.D. Li, J.B. Cheng, Q.Y. Shao, H.Q. Ling, D. Wu, Y. Wang, M. Wang, Z.G. Liu, N.B. Ming, C. Wang, H.W. Zhou, B.Y. Nguyen, Metalorganic chemical vapor deposition of lanthanum aluminate thin films for gate dielectrics, Ferroelectrics 329 (2005) 73-77.
33. J.H. Jun, D.J. Choi, A study on the lanthanum aluminate thin film as a gate dielectric material, Japanese Journal of Applied Physics 43 (2004) 7576-7578.
34. 3 gate dielectrics on Si for metal insulator semiconductor devices, Applied Physics A 80 (2005) 641-644.
35. 3 thin film properties and resistive switching characteristics, Thin Solid Films 520 (2011) 1246-1250.
36. L.F. Edge, D.G. Schlom, P. Sivasubramani, R.M. Wallance, B. Holländer, J. Schubert, Electrical characterization of amorphous lanthanum aluminate thin films grown by molecular-beam deposition on silicon, Applied Physics Letters 88 (2006) 112907-112909.
37. y films as alternative gate dielectric materials, Journal of Applied Physics 94 (2003) 1229-1234.
38. D.H. Triyoso, H. LI, R.I. Hegde, Z. Yu, K. Moore, J. Grant, B.E. White, P.J. Tobin, Lanthanum aluminate by atomic layer deposition and molecular beam epitaxy, Journal of Vacuum Science & Technology B 23 (2005) 2480-2485.
39. 3 on Si(001), Journal of Applied Physics 105 (2009) 124501-124505.
40. 3 films on Si(100) by laser molecular beam epitaxy, Journal of Crystal Growth 271 (2004) 165-170.
41. 3 on Si(001) using interface engineering, Microelectronics Reliability 47 (2007) 540-543.
42. 3 thin film on silicon: structure and electronic properties, Applied Physics Letters 90 (2007) 181925-181927.
43. 2 on Si(0 0 1) using Sr passivation, Journal of Vacuum Science & Technology B 29 (2011) 1071-1076.
44. K. Kukli, M. Ritala, V. Pore, M. Leskelä, T. Sajavaara, R.I. Hegde, D.C. Gilmer, P.J. Tobin, A.C. Jones, H.C. Aspinall, Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminate oxide films, Chemical Vapor Deposition 12 (2006) 158-164.
45. G. Congedo, S. Spiga, L. Lamagna, A. Lamperti, Y. Lebedinskii, Y. Matveyev, A. Zenkevich, P. Chernykh, M. Fanciulli, Effect of high temperature annealing on lanthanum aluminate thin films grown by ALD on Si(100), Microelectronic Engineering 86 (2009) 1696-1699.
46. 3 thin film on Si substrate, Electrochemical and Solid-State Letters 11 (2008) G33-G36.
47. D.H. Triyoso, R.I. Hegde, J.M. Grant, J.K. Schaeffer, D. Roan, B.E. White, P.J. Tobin, Evolution of lanthanum based gate dielectrics deposited by atomic layer deposition, Journal of Vacuum Science & Technology B 23 (2005) 288-297.
48. 3-buffered Si(001) using atomic layer deposition, Thin Solid Films 520 (2012) 6525-6530.
49. Z. Yu, J. Ramdani, J.A. Curless, J.M. Finder, C.D. Overgaard, R. Droopad, K.W. Eisenbeiser, J.A. Hallmark, W.J. Ooms, J.R. Conner, V.S. Kaushik, Epitaxial perovskite thin films grown by molecular beam epitaxy, Journal of Vacuum Science & Technology B 18 (2000) 1653-1657.
50. 3 epitaxial heterostructures by atomic layer deposition, Journal of Electronic Materials 41 (2012) 819-823.
51. 3 thin films by atomic layer epitaxy, Journal of Materials Chemistry 11 (2001) 2340-2345.
52. G.W. Berkstresser, A.J. Valentino, C.D. Brandle, Growth of single crystal of lanthanum aluminate, Journal of Crystal Growth 109 (1991) 457-466.
53. 3 from first principles calculations, Journal of Applied Physics 104 (2008) 073518-073524.
54. 3, Physical Review Letters 106 (2011) 023101-023104.
55. 3-buffered Si(001), Journal of Vacuum Science & Technology B 30 (2012) 04E111.
56. M. El Kazzi, G. Delhaye, C. Merckling, E. Bergignat, Y. Robach, G. Grenet, G. Hollinger, Epitaxial growth of SrO on Si(001): chemical and thermal stability, Journal of Vacuum Science & Technology A 25 (2007) 1505-1511.
57. E. Montoya, S. Bals, M.D. Rossell, D. Schryvers, G.V. Tendeloo, Evaluation of top, angle, and side cleaned FIB samples for TEM analysis, Microscopy Research and Technique 70 (2007) 1060-1071.