SiGe channel technology: Superior reliability toward ultrathin EOT devices-Part I: NBTI

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 396-404

  Franco, Jacopo ^a,b   Kaczer, Ben ^a   Roussel, Philippe J ^a   Mitard, Jérôme ^a   Cho, Moonju ^a   Witters, Liesbeth ^a   Grasser, Tibor ^a   Groeseneken, Guido ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Ge; negative bias temperature instability (NBTI); pMOSFET; reliability; SiGe

Indexed keywords

HIGH MOBILITY; NEGATIVE BIAS TEMPERATURE INSTABILITY; P-MOSFETS; PHYSICAL MODEL; PMOSFET; SIGE; SIGE CHANNELS; ULTRA-THIN;

GERMANIUM; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; RELIABILITY; SILICON ALLOYS; THERMODYNAMIC STABILITY;

INTEGRATED CIRCUITS;

EID: 84871821021     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2225625     Document Type: Article

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