P-Type ZnO materials: Theory, growth, properties and devices

Progress in Materials Science

Volumn 58, Issue 6, 2013, Pages 874-985

  Fan, J C ^a,b   Sreekanth, K M ^a,c   Xie, Z ^d   Chang, S L ^e   Rao, K V ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ANHUI UNIVERSITY OF TECHNOLOGY   (China)

^c AMRITA UNIVERSITY   (India)

^d HUNAN UNIVERSITY   (China)

^e NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENGINEERING; DOPING DIFFERENT ELEMENTS; EXCITON-BINDING ENERGY; GROWTH TECHNIQUES; HIGH ELECTRON MOBILITY; HYDROGEN INCORPORATION; ROOM TEMPERATURE FERROMAGNETISM; SELF-COMPENSATION;

BINDING ENERGY; DEFECTS; ELECTRON MOBILITY; ENERGY GAP; GROWTH (MATERIALS); MATERIALS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; ZINC;

ZINC OXIDE;

EID: 84876727540     PISSN: 00796425     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.pmatsci.2013.03.002     Document Type: Review

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