Fabrication of homostructural ZnO p-n junctions and ohmic contacts to arsenic-doped p-type ZnO

Applied Physics Letters

Volumn 83, Issue 19, 2003, Pages 4032-4034

  Ryu, Y R ^a   Lee, T S ^a   Leem, J H ^b   White, H W ^c  

^a MOXtronics Inc   (United States)

^b MOXTRONICS   (South Korea)

^c UNIVERSITY OF MISSOURI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOMOSTRUCTRAL JUNCTIONS; SCHOTTKY BARRIERS;

ARGON; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; ENERGY GAP; LEAKAGE CURRENTS; METALLIZING; OHMIC CONTACTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; ZINC OXIDE;

SEMICONDUCTOR JUNCTIONS;

EID: 0344514604     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1625787     Document Type: Article

References (8)

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