SCOPUS 정보 검색 플랫폼

Journal of Electroceramics

Volumn 22, Issue 1-3, 2009, Pages 82-86

Structural and electrical properties of Sb-doped p-type ZnO thin films fabricated by RF magnetron sputtering

(5) Kim, Dong Hun a Cho, Nam Gyu a Kim, Kyoung Sun a Han, Seungho a Kim, Ho Gi a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

Hall measurement; P type ZnO; Sb doping; Sputtering

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODEPOSITION; HALL EFFECT; HOLE CONCENTRATION; MAGNETIC FIELD EFFECTS; MAGNETRON SPUTTERING; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PHOTODEGRADATION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SURFACE ROUGHNESS; THIN FILM DEVICES; THIN FILMS; ZINC OXIDE;

CRYSTAL QUALITIES; CRYSTALLINITY; DOPING CONTENTS; DOPING EFFECTS; DOPING LEVELS; ELECTRON CONCENTRATIONS; GRAIN SIZES; HALL MEASUREMENT; HALL-EFFECT MEASUREMENTS; HIGH TEMPERATURES; OXYGEN CONTENTS; P TYPES; P-TYPE BEHAVIORS; P-TYPE ZNO; P-TYPE ZNO THIN FILMS; RADIO FREQUENCIES; RF- MAGNETRON SPUTTERING; SB-DOPED; SB-DOPING; SCANNING ELECTRON MICROSCOPES; SEM; STRUCTURAL AND ELECTRICAL PROPERTIES; X- RAY DIFFRACTIONS; ZNO THIN FILMS;

DOPING (ADDITIVES);

EID: 60649094086 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-007-9393-y Document Type: Article

Times cited : (21)

References (14)

1
- 0035932264
- Recent advances in ZnO materials and devices
- D.C. Look 2001 Recent advances in ZnO materials and devices Mater. Sci. Eng. B80 381
- (2001) Mater. Sci. Eng. , vol.80 , pp. 381
- Look, D.C.¹

2
- 6444220325
- Recent progress in processing and properties of ZnO
- S.J. Pearton D.P. Norton K. Ip Y.W. Heo T. Steiner 2005 Recent progress in processing and properties of ZnO Prog. Mat. Sci. 50 293
- (2005) Prog. Mat. Sci. , vol.50 , pp. 293
- Pearton, S.J.¹ Norton, D.P.² Ip, K.³ Heo, Y.W.⁴ Steiner, T.⁵

3
- 25144462707
- A comprehensive review of ZnO materials and devices
- U. Ozgür Y.I. Alivov C. Liu A. Teke M.A. Reshchikov S. Doǧan V. Avrutin S.J. Cho H. Morkσo 2005 A comprehensive review of ZnO materials and devices J. Appl. Phys. 98 041301
- (2005) J. Appl. Phys. , vol.98 , pp. 041301
- Ozgür, U.¹ Alivov, Y.I.² Liu, C.³ Teke, A.⁴ Reshchikov, M.A.⁵ Doǧan, S.⁶ Avrutin, V.⁷ Cho, S.J.⁸ Morko, H.⁹

4
- 0001331049
- Self-compensation limited conductivity in binary semiconductors
- G. Mandel 1964 Self-compensation limited conductivity in binary semiconductors Phys. Rev. A. 134 1037
- (1964) Phys. Rev. A. , vol.134 , pp. 1037
- Mandel, G.¹

5
- 18244430368
- Hydrogen as a cause of doping in Zinc Oxide
- C.G. van deWalle 2000 Hydrogen as a cause of doping in Zinc Oxide Phys. Rev. Lett. 85 1012
- (2000) Phys. Rev. Lett. , vol.85 , pp. 1012
- Van Dewalle, C.G.¹

6
- 4243618941
- 1st-principles calculations of solubility and doping limits-Li, Na, and N in ZnSe
- C.G. van deWalle D.B. Laks C.F. Neumark S.T. Pantelides 1993 1st-principles calculations of solubility and doping limits-Li, Na, and N in ZnSe Phys. Rev. B. 47 9425
- (1993) Phys. Rev. B. , vol.47 , pp. 9425
- Van Dewalle, C.G.¹ Laks, D.B.² Neumark, C.F.³ Pantelides, S.T.⁴

7
- 0037277330
- The path to ZnO devices: Donor and acceptor dynamics
- D.C. Look R.L. Jones J.R. Sizelove N.Y. Garces N.C. Giles L.E. Halliburton 2004 The path to ZnO devices: donor and acceptor dynamics Phys. Status Solidi A 195 171
- (2004) Phys. Status Solidi A , vol.195 , pp. 171
- Look, D.C.¹ Jones, R.L.² Sizelove, J.R.³ Garces, N.Y.⁴ Giles, N.C.⁵ Halliburton, L.E.⁶

8
- 0031271578
- Growth of p-type Zinc Oxide films by chemical vapor deposition
- K. Minegishi Y. Koiwai K. Kikuchi 1997 Growth of p-type Zinc Oxide films by chemical vapor deposition Jpn. J. Appl. Phys. 36 L1453
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 1453
- Minegishi, K.¹ Koiwai, Y.² Kikuchi, K.³

9
- 79958230334
- Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
- D.C. Look D.C. Reynolds C.W. Litton R.L. Jones D.B. Eason G. Cantwell 2002 Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy Appl. Phys. Lett. 81 1830
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1830
- Look, D.C.¹ Reynolds, D.C.² Litton, C.W.³ Jones, R.L.⁴ Eason, D.B.⁵ Cantwell, G.⁶

10
- 0042842376
- Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant
- K.K. Kim H.S. Kim D.K. Hwang J.H. Lim S.J. Park 2003 Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant Appl. Phys. Lett. 83 63
- (2003) Appl. Phys. Lett. , vol.83 , pp. 63
- Kim, K.K.¹ Kim, H.S.² Hwang, D.K.³ Lim, J.H.⁴ Park, S.J.⁵

11
- 19944433143
- Production and recovery of defects in phosphorus-implanted ZnO
- Z.Q. Chen A. Kawasuso Y. Xu H. Naramoto X.L. Yuan T. Sekiguchi R. Suzuki T. Ohdaira 2005 Production and recovery of defects in phosphorus-implanted ZnO J. Appl. Phys. 97 013528
- (2005) J. Appl. Phys. , vol.97 , pp. 013528
- Chen, Z.Q.¹ Kawasuso, A.² Xu, Y.³ Naramoto, H.⁴ Yuan, X.L.⁵ Sekiguchi, T.⁶ Suzuki, R.⁷ Ohdaira, T.⁸

12
- 0033717519
- Synthesis of p-type ZnO films
- Y.R. Ryu S. Zhu D.C. Look J.M. Wrobel H.M. Jeong H.W. White 2000 Synthesis of p-type ZnO films J. Cryst. Growth 216 330
- (2000) J. Cryst. Growth , vol.216 , pp. 330
- Ryu, Y.R.¹ Zhu, S.² Look, D.C.³ Wrobel, J.M.⁴ Jeong, H.M.⁵ White, H.W.⁶

13
- 2542438239
- Doping by large-size-mismatched impurities: The microscopic origin of arsenic- or antimony-doped p-type zinc oxide
- S. Limpijumnong S.B. Zhang S.H. Wei C.H. Park 2004 Doping by large-size-mismatched impurities: The microscopic origin of arsenic- or antimony-doped p-type zinc oxide Phys. Rev. Lett. 92 155504
- (2004) Phys. Rev. Lett. , vol.92 , pp. 155504
- Limpijumnong, S.¹ Zhang, S.B.² Wei, S.H.³ Park, C.H.⁴

14
- 0003427458
- B.D. Cullity, Elements of x-ray diffraction, p. 102 (1978)
- (1978) Elements of X-ray Diffraction , pp. 102
- Cullity, B.D.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.