SCOPUS 정보 검색 플랫폼

Volumn 476, Issue 2, 2005, Pages 272-275

Effects of growth ambient on electrical properties of Al-N co-doped p-type ZnO films

Author keywords

Co doping; DC magnetron reactive sputtering; N2O gas; p Type ZnO

Indexed keywords

ALUMINUM COMPOUNDS; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; FILM GROWTH; HALL EFFECT; MAGNETRON SPUTTERING; SUBSTRATES;

CO-DOPING; DC MAGNETRON REACTIVE SPUTTERING; GROWTH AMBIENT; N2O GAS; P-TYPE ZNO;

THIN FILMS;

EID: 13844321623 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2004.09.031 Document Type: Conference Paper

Times cited : (23)

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