Study on the p-MgZnO/i-ZnO/n-MgZnO light-emitting diode fabricated by MOCVD

Journal of Physics D: Applied Physics

Volumn 42, Issue 23, 2009, Pages

  Dong, Xin ^a   Liu, Yanbo ^b   Huang, Keke ^a   Zhao, Wang ^a   Ye, Yin ^a   Xia, Xiaochuan ^a   Zhang, Yuantao ^a   Wang, Jin ^a   Zhang, Baolin ^a   Du, Guotong ^a  

^a JILIN UNIVERSITY   (China)

^b BAICHENG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CHEMICAL VAPOUR DEPOSITION; ELECTROLUMINESCENCE SPECTRA; GAAS SUBSTRATES; I - V CURVE; METAL-ORGANIC; MOCVD; OPTICAL QUALITIES; PIN DIODE; RADIATIVE RECOMBINATION; TURN ON VOLTAGE; ULTRAVIOLET PEAKS; ZNO; ZNO LAYERS;

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIODES; DISTILLATION; GALLIUM ALLOYS; LIGHT; LIGHT EMITTING DIODES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING ZINC COMPOUNDS; ZINC OXIDE;

LIGHT EMISSION;

EID: 70450174220     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/23/235101     Document Type: Article

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