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Volumn 7, Issue 2, 2007, Pages 323-328

Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL TRANSPORT; PHOSPHORUS PENTOXIDE; RATIONAL SYNTHESIS;

EID: 33847766246     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062410c     Document Type: Article
Times cited : (470)

References (35)
  • 21
    • 0004186569 scopus 로고    scopus 로고
    • 2nd ed, John Wiley & Sons: New York
    • Massey, A. G. Main Group Chemistry, 2nd ed.; John Wiley & Sons: New York, 2000; p 286.
    • (2000) Main Group Chemistry , pp. 286
    • Massey, A.G.1
  • 22
    • 33847709799 scopus 로고    scopus 로고
    • www.jtbaker.com/msds/englishhtml/p4116.htm
  • 23
    • 0037811524 scopus 로고    scopus 로고
    • Ertekin, E.; Greaney, P. A.; Sands, T. D.; Chrzan, D. C. Mater. Res. Soc. Symp. Proc. 2003, 737, F10.4.1.
    • Ertekin, E.; Greaney, P. A.; Sands, T. D.; Chrzan, D. C. Mater. Res. Soc. Symp. Proc. 2003, 737, F10.4.1.
  • 25
    • 33847711722 scopus 로고    scopus 로고
    • Room-temperature and low-temperature photoluminescence spectra of ZnO NWs were obtained using a Renishaw inVia Raman microscope with a He-Cd laser (325nm) as the light source. The samples were placed in a Janis closed-cycle refrigerator and cooled by liquid helium. The system was pumped to a pressure of ∼10-6 Torr using a turbomolecular pump. The laser beam was focused by a microscope objective normal to the substrate surface down to a spot size of around 1 μm in diameter. The laser power was 20 mW. The emitted light was dispersed by a 2400 mm-1 grating and detected by a 1/4 in. format CCD with 3.2 mm × 2.4 mm slit size
    • -1 grating and detected by a 1/4 in. format CCD with 3.2 mm × 2.4 mm slit size.
  • 28
    • 33847723819 scopus 로고    scopus 로고
    • 2 layer (Nova Semiconductors). Ti/Au (20/160 nm) contact for n-type and as-grown ZnO:P NWs and Ni/Au (100/20 nm) contact for annealed ZnO:P NWs were defined by photolithography and consequently deposited using an E-beam evaporator. The devices were tested at room temperature using an HP4155 parameter analyzer.
    • 2 layer (Nova Semiconductors). Ti/Au (20/160 nm) contact for n-type and as-grown ZnO:P NWs and Ni/Au (100/20 nm) contact for annealed ZnO:P NWs were defined by photolithography and consequently deposited using an E-beam evaporator. The devices were tested at room temperature using an HP4155 parameter analyzer.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.