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Materials Science and Engineering: B

Volumn 176, Issue 7, 2011, Pages 548-551

Structural and electrical properties of Li-doped p-type ZnO thin films fabricated by RF magnetron sputtering

(4) Tang, Lidan a Wang, Bing a Zhang, Yue b Gu, Yousong b

a LIAONING UNIVERSITY OF TECHNOLOGY (China)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING (China)

Author keywords

ZnO, p type, p ZnO:Li n Si heterojunctions

Indexed keywords

AMINO ACIDS; FABRICATION; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; LITHIUM COMPOUNDS; MAGNETIC SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; SEMICONDUCTING ZINC COMPOUNDS; SILICON COMPOUNDS; THIN FILMS; UREA; WIDE BAND GAP SEMICONDUCTORS;

DOPED ZNO; P-TYPE; R.F. MAGNETRON SPUTTERING; RADIO-FREQUENCY-MAGNETRON SPUTTERING; STRUCTURAL AND ELECTRICAL PROPERTIES; SYNTHESISED; UREA NITRATE; ZNO POWDER; ZNO THIN FILM; ZNO, P-TYPE, P-ZNO:LI/N-SI HETEROJUNCTION;

ZINC OXIDE;

EID: 79953306421 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/j.mseb.2010.12.018 Document Type: Article

Times cited : (25)

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