Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

Applied Surface Science

Volumn 256, Issue 14, 2010, Pages 4438-4441

  Kim, Young Yi ^a   Han, Won Suk ^a   Cho, Hyung Koun ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Amphoteric doping; p Type; Sputtering; Zinc oxide

Indexed keywords

ANNEALING; ARGON; FLOW OF GASES; HETEROJUNCTIONS; HOLE CONCENTRATION; HOLE MOBILITY; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL FILMS; PHOSPHORUS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SPUTTERING; TEMPERATURE; X RAY DIFFRACTION; ZINC OXIDE;

AMPHOTERIC DOPING; ELECTROLUMINESCENCE EMISSION; LOW TEMPERATURE PHOTOLUMINESCENCE; NEUTRAL ACCEPTOR BOUND EXCITONS; P-TYPE; P-TYPE CHARACTERISTICS; RADIO FREQUENCY MAGNETRON SPUTTERING; RECTIFICATION BEHAVIOR;

THIN FILMS;

EID: 77950594401     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.01.035     Document Type: Article

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