Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films

Applied Physics Letters

Volumn 78, Issue 9, 2001, Pages 1237-1239

  Makino, T ^a   Segawa, Y ^a   Kawasaki, M ^b   Ohtomo, A ^b   Shiroki, R ^b   Tamura, K ^b   Yasuda, T ^c   Koinuma, H ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^c ISHINOMAKI SENSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000151533     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1350632     Document Type: Article

References (16)

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16. The deduced λ in Ret. 12, is not precise because the temperature range under examination was limited to 5-150 K. A more precise value, which can be obtained by expanding the temperature range, is shown in Table I.