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Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

Hopping conduction in nitrogen doped ZnO in the temperature range 10-300 K

(2) Majumdar, Sayanee a Banerji, P a

a INDIAN INSTITUTE OF TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; DOPED FILMS; ELECTRICAL TRANSPORT MECHANISMS; HOPPING CONDUCTION; INDUCED DEFECTS; N-DOPED; NITROGEN-DOPED; P-TYPE CONDUCTIVITY; ROOM TEMPERATURE; STABLE PHASE; TEMPERATURE RANGE; TEMPERATURE REGIMES; THERMALLY ACTIVATED; THERMALLY ACTIVATED HOPPING; VARIABLE RANGE HOPPING; ZNO;

ACTIVATION ENERGY; DEPOSITION; FILM PREPARATION; OXIDE FILMS; OXYGEN; PULSED LASER DEPOSITION; PULSED LASERS; ZINC;

ZINC OXIDE;

EID: 77950549253 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3353862 Document Type: Conference Paper

Times cited : (26)

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