p-Type behavior in Li-doped Zn0.9Mg0.1O thin films

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1029-1033

  Pan, X H ^a   Ye, Z Z ^a   Huang, J Y ^a   Zeng, Y J ^a   He, H P ^a   Gu, X Q ^a   Zhu, L P ^a   Zhao, B H ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

A1. Doping; A1. p Type conduction; A3. Pulsed laser deposition; B1. Zinc compounds

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; HOLE CONCENTRATION; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; ZINC COMPOUNDS;

SUBSTRATE TEMPERATURE; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

THIN FILMS;

EID: 39649111520     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.038     Document Type: Article

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