Effect of Li-doped concentration on the structure, optical and electrical properties of p-type ZnO thin films prepared by sol-gel method

Journal of Alloys and Compounds

Volumn 481, Issue 1-2, 2009, Pages 802-805

  Wang, DeYi ^a,b   Zhou, Jian ^a   Liu, GuiZhen ^a  

^a WUHAN UNIVERSITY OF TECHNOLOGY   (China)

^b YANTAI UNIVERSITY   (China)

Author keywords

Electrical property; Optical property; Sol gel; Structure; ZnO thin film

Indexed keywords

DEEP LEVEL EMISSION; DOPED ZNO; DOPING CONCENTRATION; ELECTRICAL CONDUCTIVITY; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; HALL MEASUREMENTS; NEAR ULTRAVIOLET; OPTICAL AND ELECTRICAL PROPERTIES; P TYPE ZNO THIN FILM; P-TYPE; PHOTOLUMINESCENCE SPECTRUM; POLYCRYSTALLINE WURTZITE; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; SEM; SI(1 0 0); SOL-GEL METHODS; STRUCTURE; VISIBLE REGION; ZNO THIN FILM;

CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; EMISSION SPECTROSCOPY; GALVANOMAGNETIC EFFECTS; GELATION; GELS; HALL MOBILITY; HOLE CONCENTRATION; LIGHT; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; THIN FILM DEVICES; THIN FILMS; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

STRUCTURAL PROPERTIES;

EID: 67649283805     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.03.111     Document Type: Article

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