A facile route to arsenic-doped p-type ZnO films

Journal of Crystal Growth

Volumn 311, Issue 14, 2009, Pages 3577-3580

  Wang, S P ^a,b   Shan, C X ^a   Li, B H ^a   Zhang, J Y ^a   Yao, B ^a   Shen, D Z ^a   Fan, X W ^a  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A1. Diffusion; A1. Doping; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

A1. DIFFUSION; A1. DOPING; A3. MOLECULAR BEAM EPITAXY; AIR AMBIENT; B2. SEMICONDUCTING II-VI MATERIALS; GAAS WAFER; HALL MEASUREMENTS; P-TYPE ZNO FILM; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENT; ZNO; ZNO FILMS;

ACTIVATION ENERGY; ARSENIC; CORUNDUM; CRYSTAL GROWTH; DOPING (ADDITIVES); GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE CONCENTRATION; HOLE MOBILITY; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOLECULAR SPECTROSCOPY; OXIDE FILMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; ZINC; ZINC OXIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 67649878121     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.06.002     Document Type: Article

References (25)

1. Tsukazaki A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Mater. 4 (2005) 42
2. Jiao S.J., Zhang Z.Z., Lu Y.M., Shen D.Z., Yao B., Zhang J.Y., Li B.H., Zhao D.X., Fan X.W., and Tang Z.K. Appl. Phys. Lett. 88 (2006) 031911
3. Leong E.S.P., Yu S.F., and Lau S.P. Appl. Phys. Lett. 89 (2006) 221109
4. Ryu Y.R., Lubguban J.A., Lee T.S., White H.W., Jeong T.S., Youn C.J., and Kim B.J. Appl. Phys. Lett. 90 (2007) 131115
5. Xiu F.X., Yang Z., Mandalapu L.J., Zhao D.T., Liu J.L., and Beyermann W.P. Appl. Phys. Lett. 87 (2005) 152101
6. Liang H.W., Lu Y.M., Shen D.Z., Liu Y.C., Yan J.F., Shan C.X., Li B.H., Zhang Z.Z., Zhang J.Y., and Fan X.W. Phys. Status Solidi A 202 (2005) 1060
7. Xu W.Z., Ye Z.Z., Zhou T., Zhao B.H., Zhu L.P., and Huang J.Y. J. Cryst. Growth 265 (2004) 133
8. Gangil S., Nakamura A., Ichikawa Y., Yamamoto K., Ishihara J., Aoki T., and Temmyo J. J. Cryst. Growth 298 (2007) 486
9. Xu N., Xu Y., Li L., Shen Y., Zhang T., Wu J., Sun J., and Ying Z. J. Vac. Sci. Technol. A 24 (2006) 517
10. Liu H.F., Chua S.J., Hu G.X., Gong H., and Xiang N. J. Appl. Phys. 102 (2007) 063507
11. Wang P., Chen N., Yin Z., Yang F., Peng C., Dai R., and Bai Y. J. Appl. Phys. 100 (2006) 043704
12. Bang K.H., Hwang D.K., Park M.C., Ko Y.D., Yun I., and Myoung J.M. Appl. Surf. Sci. 210 (2003) 177
13. Sun J.C., Zhao J.Z., Liang H.W., Bian J.M., Hu L.Z., Zhang H.Q., Liang X.P., Liu W.F., and Du G.T. Appl. Phys. Lett. 90 (2007) 121128
14. Zhang J.Y., Li P.J., Sun H., Shen X., Deng T.S., Zhu K.T., Zhang Q.F., and Wu J.L. Appl. Phys. Lett. 93 (2008) 021116
15. Kang H.S., Kim G.H., Kim D.L., Chang H.W., Ahn B.D., and Lee S.Y. Appl. Phys. Lett. 89 (2006) 181103
16. Maksimov O., and Liu B.Z. J. Cryst. Growth 310 (2008) 3149
17. Sun J.C., Liang H.W., Zhao J.Z., Feng Q.J., Bian J.M., Zhao Z.W., Zhang H.Q., Luo Y.M., Hu L.Z., and Du G.T. Appl. Surf. Sci. 254 (2008) 7482
18. Limpijumnong S., Zhang S.B., Wei S.H., and Park C.H. Phys. Rev. Lett. 92 (2004) 155504
19. Hwang D.K., Kim H.S., Lim J.H., Oh J.Y., Yang J.H., Park S.J., Kim K.K., Look D.C., and Park Y.S. Appl. Phys. Lett. 86 (2005) 151917
20. Ryu Y.R., Lee T.S., and White H.W. Appl. Phys. Lett. 83 (2003) 87
21. Sun J.W., Lu Y.M., Liu Y.C., Shen D.Z., Zhang Z.Z., Yao B., Li B.H., Zhang J.Y., Zhao D.X., and Fan X.W. J. Appl. Phys. 102 (2007) 043522
22. Shan C.X., Liu Z., and Hark S.K. Appl. Phys. Lett. 92 (2008) 073103
23. Su S.C., Lu Y.M., Zhang Z.Z., Li B.H., Shen D.Z., Yao B., Zhao D.X., and Fan X.W. Physica B 403 (2008) 2590
24. Ashrafi A.B.M.A., Binh N.T., Zhang B.P., and Segawa Y. J. Appl. Phys. 95 (2004) 7738
25. Shan C.X., Liu Z., Zhang Z.Z., Shen D.Z., and Hark S.K. J. Phys. Chem. B 110 (2006) 11176