Conversion of p-type to n-type conductivity in undoped ZnO films by increasing operating temperature

Applied Surface Science

Volumn 257, Issue 4, 2010, Pages 1236-1238

  Liu, Yanxia ^a   Zhang, Hongliang ^a   Zhang, Zhenxing ^a   Xie, Yizhu ^a   Xie, Erqing ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Conductivity conversion; Defects; ZnO thin films

Indexed keywords

ANNEALING; DEFECTS; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTING FILMS; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

LOWER TEMPERATURES; N-TYPE CONDUCTIVITY; OPERATING TEMPERATURE; OXYGEN-RELATED DEFECTS; P TYPE CONDUCTIVITY; P-TYPE ZNO FILM; SAPPHIRE SUBSTRATES; ZNO THIN FILM;

THIN FILMS;

EID: 77957153111     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.08.030     Document Type: Article

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